-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1N5407GP-AP | DIODE GPP 3A DO-201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | 40pF @ 4V, 1MHz | 800V | -55°C ~ 150°C | |||
SF51-TP | DIODE GPP HE 5A DO-201AD | Micro Commercial Co | DO-201AD, Axial | 5A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 45pF @ 4V, 1MHz | 50V | 35ns | -55°C ~ 150°C | ||
FR303-TP | DIODE GEN PURP 200V 3A DO201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 200V | 65pF @ 4V, 1MHz | 1.3V @ 3A | 200V | 150ns | -55°C ~ 150°C |
MUR420GP-TP | DIODE GEN PURP 200V 4A DO201AD | Micro Commercial Co | DO-201AD, Axial | 4A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 200V | 80pF @ 4V, 1MHz | 1.35V @ 4A | 200V | 60ns | -55°C ~ 150°C |
FR304GP-AP | DIODE GP 400V 3A DO201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50pF @ 4V, 1MHz | 400V | 150ns | -55°C ~ 150°C | ||
SF36G-TP | DIODE GPP HE 3A DO-201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 30pF @ 4V, 1MHz | 400V | 35ns | -65°C ~ 150°C | ||
FR302-AP | DIODE GP 50V 3A DO201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 65pF @ 4V, 1MHz | 100V | 150ns | -55°C ~ 150°C | ||
ER300-AP | DIODE GEN PURP 50V 3A DO201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 35pF @ 4V, 1MHz | 50V | 35ns | -55°C ~ 150°C | ||
SF64-AP | DIODE GPP SUPER FAST 6A DO-201AD | Micro Commercial Co | DO-201AD, Axial | 6A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 120pF @ 4V, 1MHz | 200V | 35ns | -65°C ~ 125°C | ||
SR308-TP | DIODE SCHOTTKY 80V 3A DO201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Schottky | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 850mV @ 3A | 80V | -55°C ~ 125°C | ||
FR504GP-TP | DIODE GPP FAST 5A DO-201AD | Micro Commercial Co | DO-201AD, Axial | 5A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 65pF @ 4V, 1MHz | 400V | 150ns | -55°C ~ 150°C | ||
HER308-AP | DIODE GPP HE 3A DO-201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50pF @ 4V, 1MHz | 1000V | 75ns | -55°C ~ 150°C | ||
FR507GP-AP | DIODE GPP FAST 5A DO-201AD | Micro Commercial Co | DO-201AD, Axial | 5A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 65pF @ 4V, 1MHz | 1000V | 500ns | -55°C ~ 150°C | ||
ER302-AP | DIODE GEN PURP 200V 3A DO201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 35pF @ 4V, 1MHz | 200V | 35ns | -55°C ~ 150°C | ||
ER301A-AP | DIODE GEN PURP 150V 3A DO201AD | Micro Commercial Co | DO-201AD, Axial | 3A | Standard | Through Hole | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 35pF @ 4V, 1MHz | 150V | 35ns | -55°C ~ 150°C |
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