Semiconductors, Diodes Infineon Technologies BG-PB501-1

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 3
  • DZ600N14KHQSA2
    DIODE BG-PB501-1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: BG-PB501-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1400V
    • Current - Average Rectified (Io): 735A
    • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 2200A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 40mA @ 1400V
    • Operating Temperature - Junction: 150°C (Max)
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  • DZ600N16KB01HPSA1
    THYR / DIODE MODULE DK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: BG-PB501-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1800V
    • Current - Average Rectified (Io): 735A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 40mA @ 1800V
    • Operating Temperature - Junction: 150°C (Max)
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  • DZ435N40KS01HPSA1
    THYR / DIODE MODULE DK
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: BG-PB501-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 4000V
    • Current - Average Rectified (Io): 700A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 50mA @ 4000V
    • Operating Temperature - Junction: 150°C (Max)
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