Semiconductors, Diodes Infineon Technologies BG-PB20-1

Diodes - RF 0
Diodes - Rectifiers - Arrays 5
Diodes - Bridge Rectifiers 1
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 6

ND104N18KHPSA1

DIODE GP 1.8KV 104A BG-PB20-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB20-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io): 104A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1800V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND104N16KHPSA1

DIODE GP 1.6KV 104A BG-PB20-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB20-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 104A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1600V
- Operating Temperature - Junction: -40°C ~ 135°C
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DD104N18KHPSA1

BRIDGE RECT 1PH 1.8V 104A PB20-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: Module
- Supplier Device Package: BG-PB20-1
- Diode Type: Single Phase
- Current - Average Rectified (Io): 104A
- Current - Reverse Leakage @ Vr: 20mA @ 1800V
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.8kV
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ND89N12KHPSA1

DIODE GP 1.2KV 89A BG-PB20-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB20-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 89A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1200V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND104N12KHPSA1

DIODE GP 1.2KV 104A BG-PB20-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB20-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 104A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1200V
- Operating Temperature - Junction: -40°C ~ 135°C
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ND89N16KHPSA1

DIODE GP 1.6KV 89A BG-PB20-1

Infineon Technologies
- Manufacturer: Infineon Technologies
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB20-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 89A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 20mA @ 1600V
- Operating Temperature - Junction: -40°C ~ 135°C
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