Semiconductors, Diodes Infineon Technologies BG-DSW271-1

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 1
  • D170S25BS1XPSA1
    DIODE GEN PURP BG-DSW271-1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Stud Mount
    • Package / Case: Stud
    • Supplier Device Package: BG-DSW271-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2500V
    • Current - Average Rectified (Io): 255A
    • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 800A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 4µs
    • Current - Reverse Leakage @ Vr: 5mA @ 2500V
    • Operating Temperature - Junction: 140°C (Max)
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