- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BAT 15-02LS E6327 | RF DIODE SCHOTTKY 4V TSSLP-2 | Infineon Technologies | 0201 (0603 Metric) | 4V | Schottky - Single | PG-TSSLP-2-1 | 110mA | |||||||||||||||||||
IDP06E60XKSA1 | RECTIFIER DIODE, 14.7A, 600V | Infineon Technologies | ||||||||||||||||||||||||
D4201N18TS01VFXPSA1 | DIODE MODULE | Infineon Technologies | DO-200AE | 6010A | Standard | Chassis Mount | BG-D12035K-1 | Standard Recovery >500ns, > 200mA (Io) | 200mA @ 2200V | 1V @ 4000A | 2200V | -40°C ~ 160°C | ||||||||||||||
IDH10S120AKSA1 | DIODE SCHOTTKY 1200V 10A TO220-2 | Infineon Technologies | TO-220-2 | 10A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 240µA @ 1200V | 500pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | CoolSiC™+ | |||||||||||
BA89202VH6127XTSA1 | RF DIODE STANDARD 35V SC79-2 | Infineon Technologies | SC-79, SOD-523 | 35V | Standard - Single | PG-SC79-2 | 150°C (TJ) | 100mA | 1.1pF @ 3V, 1MHz | 500mOhm @ 10mA, 100MHz | ||||||||||||||||
BAT54WE6327 | RECTIFIER DIODE, SCHOTTKY | Infineon Technologies | SC-70, SOT-323 | 200mA (DC) | Schottky | Surface Mount | PG-SOT323-3 | Small Signal =< 200mA (Io), Any Speed | 2µA @ 25V | 10pF @ 1V, 1MHz | 800mV @ 100mA | 30V | 5ns | 150°C | ||||||||||||
DZ600N14KHPSA1 | DIODE GEN PURP 1.4KV 735A MODULE | Infineon Technologies | Module | 735A | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 1400V | 1.4V @ 2200A | 1400V | -40°C ~ 150°C | ||||||||||||||
BAR 90-098L4 E6327 | RF DIODE PIN 80V 250MW TSLP-4-7 | Infineon Technologies | 4-XFDFN | 80V | PIN - 2 Independent | PG-TSLP-4-7 | 150°C (TJ) | 100mA | 0.35pF @ 1V, 1MHz | 250mW | 800mOhm @ 10mA, 100MHz | |||||||||||||||
BBY5802VH6327XTSA1 | DIODE TUNING 10V 20MA SC79 | Infineon Technologies | SC-79, SOD-523 | 10V | Single | Surface Mount | PG-SC79-2 | -55°C ~ 150°C (TJ) | 5.5pF @ 6V, 1MHz | 3.5 | C1/C4 | |||||||||||||||
BA 892 E6127 | RF DIODE STANDARD 35V SCD80 | Infineon Technologies | SC-80 | 35V | Standard - Single | SCD-80 | 150°C (TJ) | 100mA | 1.1pF @ 3V, 1MHz | 500mOhm @ 10mA, 100MHz | ||||||||||||||||
BA592E6327HTSA1 | RF DIODE STANDARD 35V SOD323-2 | Infineon Technologies | SC-76, SOD-323 | 35V | Standard - Single | PG-SOD323-2 | 150°C (TJ) | 100mA | 1.1pF @ 3V, 1MHz | 500mOhm @ 10mA, 100MHz | ||||||||||||||||
BAT54-04E6327 | RECTIFIER DIODE, SCHOTTKY | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Schottky | Surface Mount | PG-SOT23-3-3 | Small Signal =< 200mA (Io), Any Speed | 2µA @ 25V | 800mV @ 100mA | 30V | 5ns | 150°C | 1 Pair Series Connection | 200mA (DC) | ||||||||||||
D475N36BXPSA1 | DIODE GEN PURP 3.6KV 475A | Infineon Technologies | DO-205AA, DO-8, Stud | 475A | Standard | Stud Mount | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 3600V | 3600V | -40°C ~ 160°C | ||||||||||||||||
MMBD7000LT1 | SILICON SWITCHING DIODE ARRAY | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Standard | Surface Mount | SOT-23-3 (TO-236) | Small Signal =< 200mA (Io), Any Speed | 3µA @ 100V | 1.1V @ 100mA | 100V | 4ns | -55°C ~ 150°C | 1 Pair Series Connection | 200mA (DC) | ||||||||||||
D820N28TXPSA1 | DIODE GEN PURP 2.8KV 820A | Infineon Technologies | DO-200AA, A-PUK | 820A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 2800V | 1.25V @ 750A | 2800V | -40°C ~ 180°C |
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