- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BAS 16-02V E6327 | DIODE GEN PURP 80V 200MA SC79-2 | Infineon Technologies | SC-79, SOD-523 | 200mA (DC) | Standard | Surface Mount | PG-SC79-2 | Small Signal =< 200mA (Io), Any Speed | 1µA @ 75V | 2pF @ 0V, 1MHz | 1.25V @ 150mA | 80V | 4ns | 150°C (Max) | ||||||||||||
BAR63-05WH6327 | PIN DIODE, 50V V(BR) | Infineon Technologies | SC-70, SOT-323 | 50V | PIN - 1 Pair Common Cathode | PG-SOT323-3 | 150°C (TJ) | 100mA | 0.3pF @ 5V, 1MHz | 250mW | ||||||||||||||||
BA595E6359HTMA1 | RF DIODE PIN 50V SC79-2 | Infineon Technologies | SC-79, SOD-523 | 50V | PIN - Single | PG-SC79-2-1 | 150°C (TJ) | 50mA | 0.6pF @ 10V, 1MHz | 7Ohm @ 10mA, 100MHz | Automotive, AEC-Q101 | |||||||||||||||
IDW40G65C5B | IDW40G65 - COOLSIC SCHOTTKY DIOD | Infineon Technologies | TO-247-3 | Silicon Carbide Schottky | Through Hole | PG-TO247-3-41 | No Recovery Time > 500mA (Io) | 210µA @ 650V | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 20A (DC) | ||||||||||||
D2450N07TXPSA1 | DIODE GEN PURP 700V 2450A | Infineon Technologies | DO-200AB, B-PUK | 2450A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 700V | 880mV @ 2000A | 700V | -40°C ~ 180°C | |||||||||||||||
AIDW30E60 | DIODE GEN PURP 600V 30A TO247-3 | Infineon Technologies | ||||||||||||||||||||||||
IDH12G65C6XKSA1 | DIODE SCHOTTKY 650V 27A TO220-2 | Infineon Technologies | TO-220-2 | 27A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2 | No Recovery Time > 500mA (Io) | 40µA @ 420V | 594pF @ 1V, 1MHz | 1.35V @ 12A | 650V | 0ns | -55°C ~ 175°C | ||||||||||||
BAS125-04WE6327 | RECTIFIER DIODE, SCHOTTKY | Infineon Technologies | SC-70, SOT-323 | Schottky | Surface Mount | PG-SOT323-3 | Small Signal =< 200mA (Io), Any Speed | 150nA @ 25V | 950mV @ 35mA | 25V | 150°C | 1 Pair Series Connection | 100mA (DC) | |||||||||||||
BAT6404E6327 | RECTIFIER DIODE, SCHOTTKY | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Schottky | Surface Mount | PG-SOT23 | Small Signal =< 200mA (Io), Any Speed | 2µA @ 30V | 750mV @ 100mA | 40V | 5ns | 150°C (Max) | 1 Pair Series Connection | 120mA | ||||||||||||
IDH02SG120XKSA1 | DIODE SCHOTTKY 1200V 2A TO220-2 | Infineon Technologies | TO-220-2 | 2A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 48µA @ 1200V | 125pF @ 1V, 1MHz | 1.8V @ 2A | 1200V | 0ns | -55°C ~ 175°C | CoolSiC™+ | |||||||||||
SDP06S60 | DIODE SCHOTTKY 600V 6A TO220AB | Infineon Technologies | TO-220-3 | 6A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-3-1 | No Recovery Time > 500mA (Io) | 200µA @ 600V | 300pF @ 0V, 1MHz | 1.7V @ 6A | 600V | 0ns | -55°C ~ 175°C | ||||||||||||
BAT5406E6327HTSA1 | DIODE ARRAY SCHOTTKY 30V SOT23 | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Schottky | Surface Mount | PG-SOT23 | Small Signal =< 200mA (Io), Any Speed | 2µA @ 25V | 800mV @ 100mA | 30V | 5ns | 150°C (Max) | 1 Pair Common Anode | 200mA (DC) | ||||||||||||
D126A45CXPSA1 | DIODE GEN PURP 4.5KV 200A | Infineon Technologies | DO-205AA, DO-8, Stud | 200A | Standard | Stud Mount | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 4500V | 4500V | -40°C ~ 160°C | ||||||||||||||||
BAR81WE6327BTSA1 | DIODE STANDAR 30V 100MW SOT343-4 | Infineon Technologies | SC-82A, SOT-343 | 30V | Standard - Single | PG-SOT343-3D | 150°C (TJ) | 100mA | 0.9pF @ 3V, 1MHz | 100mW | 1Ohm @ 5mA, 100MHz | |||||||||||||||
IDV20E65D1XKSA1 | DIODE GP 650V 28A TO220-2FP | Infineon Technologies | TO-220-2 Full Pack | 28A (DC) | Standard | Through Hole | PG-TO220-2 Full Pack | Fast Recovery =< 500ns, > 200mA (Io) | 40µA @ 650V | 1.7V @ 20A | 650V | 42ns | -40°C ~ 175°C |
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