- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BB 659C-02V E7912 | DIODE VARIABLE 30V 20MA SC-79 | Infineon Technologies | SC-79, SOD-523 | 30V | Single | Surface Mount | PG-SC79-2 | -55°C ~ 150°C (TJ) | 2.75pF @ 28V, 1MHz | 15.3 | C1/C28 | |||||||||||||||
D1230N18TXPSA1 | DIODE GEN PURP 1.8KV 1230A | Infineon Technologies | DO-200AA, A-PUK | 1230A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 1800V | 1.063V @ 800A | 1800V | -40°C ~ 180°C | |||||||||||||||
BAS1602VH6327XTSA1 | DIODE GEN PURP 80V 200MA SC79-2 | Infineon Technologies | SC-79, SOD-523 | 200mA (DC) | Standard | Surface Mount | PG-SC79-2 | Small Signal =< 200mA (Io), Any Speed | 1µA @ 75V | 2pF @ 0V, 1MHz | 1.25V @ 150mA | 80V | 4ns | 150°C (Max) | ||||||||||||
D251N20BXPSA1 | DIODE GEN PURP 2KV 255A | Infineon Technologies | DO-205AA, DO-8, Stud | 255A | Standard | Stud Mount | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 2000V | 2000V | -40°C ~ 180°C | ||||||||||||||||
BBY6605WE6327 | VARIABLE CAPACITANCE DIODE | Infineon Technologies | SC-70, SOT-323 | 12V | 1 Pair Common Cathode | Surface Mount | SOT-323 | -55°C ~ 150°C (TJ) | 13.5pF @ 4.5V, 1MHz | 5.41 | C1/C4.5 | |||||||||||||||
SIDC14D60E6X1SA3 | DIODE SWITCHING 600V WAFER | Infineon Technologies | Die | 30A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.25V @ 30A | 600V | -55°C ~ 150°C | ||||||||||||||
DD171N16KHPSA2 | DIODE | Infineon Technologies | Module | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 1600V | 1.26V @ 500A | 1600V | 150°C | 1 Pair Series Connection | 171A | DD171N | |||||||||||||
BB565E7902 | VARIABLE CAPACITANCE DIODE | Infineon Technologies | SC-80 | 30V | Single | Surface Mount | SCD-80 | -55°C ~ 150°C (TJ) | 2.2pF @ 28V, 1MHz | 11 | C1/C28 | |||||||||||||||
DD89N14KHPSA1 | DIODE MODULE GP 1400V 89A | Infineon Technologies | Module | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 20mA @ 1400V | 1.5V @ 300A | 1400V | -40°C ~ 150°C | 1 Pair Common Cathode | 89A | |||||||||||||
ND350N12KHPSA1 | DIODE GP 1.2KV 350A BG-PB50ND-1 | Infineon Technologies | Module | 350A | Standard | Chassis Mount | BG-PB50ND-1 | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 1200V | 1200V | -40°C ~ 135°C | |||||||||||||||
BAT1502LSE6433XTMA1 | DIODE SCHOTTKY 4V 110MA TSSLP-2 | Infineon Technologies | 0201 (0603 Metric) | 110mA (DC) | Schottky | Surface Mount | PG-TSSLP-2-3 | Small Signal =< 200mA (Io), Any Speed | 5µA @ 1V | 350pF @ 0V, 1MHz | 410mV @ 10mA | 4V | -55°C ~ 150°C | |||||||||||||
IRD3CH5BD6 | DIODE CHIP EMITTER CONTROLLED | Infineon Technologies | ||||||||||||||||||||||||
BAR63-03WE6433 | PIN DIODE, 50V V(BR) | Infineon Technologies | SC-76, SOD-323 | 50V | PIN - Single | PG-SOD323-2 | 150°C (TJ) | 100mA | 0.3pF @ 5V, 1MHz | 250mW | 1Ohm @ 10mA, 100MHz | |||||||||||||||
BBY5202LE6816XTMA1 | DIODE TUNING 7V 20MA TSLP-2 | Infineon Technologies | SOD-882 | 7V | Single | Surface Mount | PG-TSLP-2-1 | -55°C ~ 150°C (TJ) | 1.45pF @ 4V, 1MHz | 2.1 | C1/C4 | |||||||||||||||
D1381S45TXPSA1 | DIODE GEN PURP 4.5KV 1630A | Infineon Technologies | DO-200AD | 1630A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 100mA @ 4500V | 2.6V @ 2500A | 4500V | -40°C ~ 140°C |
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