- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BB857H7902XTSA1 | DIODE TUNING 30V 20MA SCD80 | Infineon Technologies | SC-80 | 30V | Single | Surface Mount | SCD-80 | -55°C ~ 150°C (TJ) | 0.52pF @ 28V, 1MHz | 12.7 | C1/C28 | |||||||||||||||
| BAV99SE6433HTMA1 | DIODE ARRAY GP 80V 200MA SOT363 | Infineon Technologies | 6-VSSOP, SC-88, SOT-363 | Standard | Surface Mount | PG-SOT363-PO | Small Signal =< 200mA (Io), Any Speed | 150nA @ 70V | 1.25V @ 150mA | 80V | 4ns | 150°C (Max) | 2 Pair Series Connection | 200mA (DC) | ||||||||||||
| BA892H6433XTMA1 | RF DIODE STANDARD 35V SCD80 | Infineon Technologies | SC-80 | 35V | Standard - Single | SCD-80 | 150°C (TJ) | 100mA | 1.1pF @ 3V, 1MHz | 500mOhm @ 10mA, 100MHz | ||||||||||||||||
| D3501N40TXPSA1 | DIODE GEN PURP 4KV 4870A | Infineon Technologies | DO-200AE | 4870A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 100mA @ 4000V | 1.27V @ 4000A | 4000V | -40°C ~ 160°C | |||||||||||||||
| IDP06E60 | DIODE GEN PURP 600V 14.7A TO220 | Infineon Technologies | TO-220-2 | 14.7A (DC) | Standard | Through Hole | PG-TO220-2-2 | Fast Recovery =< 500ns, > 200mA (Io) | 50µA @ 600V | 2V @ 6A | 600V | 70ns | -55°C ~ 175°C | |||||||||||||
| BAS7007WH6327XTSA1 | DIODE ARRAY SCHOTTKY 70V SOT343 | Infineon Technologies | SC-82A, SOT-343 | Schottky | Surface Mount | PG-SOT343-4-1 | Small Signal =< 200mA (Io), Any Speed | 100nA @ 50V | 1V @ 15mA | 70V | 100ps | 150°C (Max) | 2 Independent | 70mA (DC) | ||||||||||||
| BB68902VH7902XTSA1 | DIODE TUNING 30V 20MA SC79 | Infineon Technologies | SC-79, SOD-523 | 30V | Single | Surface Mount | PG-SC79-2 | -55°C ~ 150°C (TJ) | 2.9pF @ 28V, 1MHz | 23.2 | C1/C28 | |||||||||||||||
| BAL74E6327 | SILICON SWITCHING DIODE | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | 250mA (DC) | Standard | Surface Mount | PG-SOT23 | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 2pF @ 0V, 1MHz | 1V @ 100mA | 50V | 4ns | -65°C ~ 150°C | ||||||||||||
| DD82S10KHPSA1 | DIODE MODULE GP 100V 96A | Infineon Technologies | Module | Standard | Chassis Mount | Module | Standard Recovery >500ns, > 200mA (Io) | 40mA @ 100V | 1.55V @ 300A | 100V | -40°C ~ 150°C | 1 Pair Series Connection | 96A | |||||||||||||
| BB66402VE7902 | VARIABLE CAPACITANCE DIODE | Infineon Technologies | ||||||||||||||||||||||||
| BAV 70S E6433 | DIODE ARRAY GP 80V 200MA SOT363 | Infineon Technologies | 6-VSSOP, SC-88, SOT-363 | Standard | Surface Mount | PG-SOT363-PO | Small Signal =< 200mA (Io), Any Speed | 150nA @ 70V | 1.25V @ 150mA | 80V | 4ns | 150°C (Max) | 2 Pair Common Cathode | 200mA (DC) | ||||||||||||
| SDT06S60 | DIODE SCHOTTKY 600V 6A TO220-2 | Infineon Technologies | TO-220-2 | 6A (DC) | Silicon Carbide Schottky | Through Hole | PG-TO220-2-2 | No Recovery Time > 500mA (Io) | 200µA @ 600V | 300pF @ 0V, 1MHz | 1.7V @ 6A | 600V | 0ns | -55°C ~ 175°C | CoolSiC™+ | |||||||||||
| DD89N08KKHPSA1 | DIODE ARRAY MOD 1200V 140A | Infineon Technologies | ||||||||||||||||||||||||
| IDL02G65C5XUMA1 | DIODE SCHOTTKY 650V 2A VSON-4 | Infineon Technologies | 4-PowerTSFN | 2A (DC) | Silicon Carbide Schottky | Surface Mount | PG-VSON-4 | No Recovery Time > 500mA (Io) | 35µA @ 650V | 70pF @ 1V, 1MHz | 1.7V @ 2A | 650V | 0ns | -55°C ~ 175°C | CoolSiC™+ | |||||||||||
| SIDC04D60F6X1SA3 | DIODE GEN PURP 600V 9A WAFER | Infineon Technologies | Die | 9A (DC) | Standard | Surface Mount | Sawn on foil | Fast Recovery =< 500ns, > 200mA (Io) | 27µA @ 600V | 1.6V @ 9A | 600V | -40°C ~ 150°C |
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