- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Power Dissipation (Max)
|
Resistance @ If, F
|
Capacitance Ratio
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Capacitance Ratio Condition
|
Q @ Vr, F
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
D452N12EVFXPSA1 | DIODE GEN PURP 1.2KV 450A FL54 | Infineon Technologies | Nonstandard | 450A | Standard | Screw Mount | FL54 | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 1200V | 1200V | -40°C ~ 180°C | |||||||||||||||
BAS4005E6433HTMA1 | DIODE ARRAY SCHOTTKY 40V SOT23 | Infineon Technologies | TO-236-3, SC-59, SOT-23-3 | Schottky | Surface Mount | PG-SOT23 | Small Signal =< 200mA (Io), Any Speed | 1µA @ 30V | 1V @ 40mA | 40V | 100ps | 150°C (Max) | 1 Pair Common Cathode | 120mA (DC) | ||||||||||||
D1230N16TXPSA1 | DIODE GEN PURP 1.6KV 1230A | Infineon Technologies | DO-200AA, A-PUK | 1230A | Standard | Chassis Mount | Standard Recovery >500ns, > 200mA (Io) | 50mA @ 1600V | 1.063V @ 800A | 1600V | -40°C ~ 180°C | |||||||||||||||
SIDC07D60F6X1SA5 | DIODE SWITCHING 600V WAFER | Infineon Technologies | Die | 22.5A (DC) | Standard | Surface Mount | Die | Standard Recovery >500ns, > 200mA (Io) | 27µA @ 600V | 1.6V @ 22.5A | 600V | -40°C ~ 175°C | ||||||||||||||
GATELEADWH406XPSA1 | STD THYR/DIODEN DISC | Infineon Technologies | ||||||||||||||||||||||||
BB639CE7904HTSA1 | DIODE VAR CAP 30V 20MA SOD-323 | Infineon Technologies | SC-76, SOD-323 | 30V | Single | Surface Mount | PG-SOD323-2 | -55°C ~ 150°C (TJ) | 2.75pF @ 28V, 1MHz | 15.3 | C1/C28 | |||||||||||||||
BAS 52-02V E6433 | DIODE SCHOTTKY 45V 750MA SC79-2 | Infineon Technologies | SC-79, SOD-523 | 750mA (DC) | Schottky | Surface Mount | PG-SC79-2 | Fast Recovery =< 500ns, > 200mA (Io) | 10µA @ 45V | 10pF @ 10V, 1MHz | 600mV @ 200mA | 45V | 150°C (Max) | |||||||||||||
SDD04S60 | DIODE SCHOTTKY 600V 4A TO252-3 | Infineon Technologies | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4A (DC) | Silicon Carbide Schottky | Surface Mount | PG-TO252-3-11 | No Recovery Time > 500mA (Io) | 200µA @ 600V | 150pF @ 0V, 1MHz | 1.9V @ 4A | 600V | 0ns | -55°C ~ 175°C | CoolSiC™+ | |||||||||||
DDB6U104N16RRPB37BPSA1 | BRIDGE RECT 3P 1.6KV 35A ECONO2 | Infineon Technologies | Module | 1.6kV | 35A | Three Phase | Chassis Mount | AG-ECONO2-7 | Standard | -40°C ~ 150°C (TJ) | 5mA @ 1600V | 2.15V @ 35A | EconoPACK™2 | |||||||||||||
BAW78B-E6327 | RECTIFIER DIODE, 1A | Infineon Technologies | ||||||||||||||||||||||||
IDW40E65D2FKSA1 | DIODE GEN PURP 650V 80A TO247-3 | Infineon Technologies | TO-247-3 | 80A | Standard | Through Hole | PG-TO247-3-1 | Fast Recovery =< 500ns, > 200mA (Io) | 40µA @ 650V | 2.3V @ 40A | 650V | 75ns | -40°C ~ 175°C | |||||||||||||
D1461S45TXPSA2 | DIODE GEN PURP D10026K-1 | Infineon Technologies | DO-200, Variant | 1720A | Standard | Chassis Mount | BG-D10026K-1 | Standard Recovery >500ns, > 200mA (Io) | 200mA @ 4500V | -40°C ~ 140°C | ||||||||||||||||
BAR9002ELSE6327XTSA1 | RF DIODE PIN 80V 250MW TSSLP-2 | Infineon Technologies | 0201 (0603 Metric) | 80V | PIN - Single | PG-TSSLP-2-3 | 150°C (TJ) | 100mA | 0.35pF @ 1V, 1MHz | 250mW | 800mOhm @ 10mA, 100MHz | |||||||||||||||
BAR65-03WE6327 | BAR65 - PIN DIODE | Infineon Technologies | ||||||||||||||||||||||||
DD500S33HE3BOSA1 | MODULE DIODE IHVB130-3 | Infineon Technologies | Module | Standard | Chassis Mount | AG-IHVB130-3 | Standard Recovery >500ns, > 200mA (Io) | 500A @ 1800V | 3.85V @ 500A | 3300V | -40°C ~ 150°C | 2 Independent | 500A (DC) |
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