Semiconductors, Diodes Harris Corporation AL-4

Found: 7
  • RECTIFIER DIODE, 3A, 100V
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: DO-204, Axial
    • Supplier Device Package: AL-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 3µA @ 100V
    • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • RECTIFIER DIODE, 6A, 200V
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: DO-204, Axial
    • Supplier Device Package: AL-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 6A
    • Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 5µA @ 200V
    • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • RECTIFIER DIODE, 6A, 50V
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: DO-204, Axial
    • Supplier Device Package: AL-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 6A
    • Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 5µA @ 50V
    • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • RECTIFIER DIODE, 6A, 100V
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: DO-204, Axial
    • Supplier Device Package: AL-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 6A
    • Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 5µA @ 100V
    • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • RECTIFIER DIODE, 3A, 150V
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: DO-204, Axial
    • Supplier Device Package: AL-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 150V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 3µA @ 150V
    • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • RECTIFIER DIODE, 3A, 200V
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: DO-204, Axial
    • Supplier Device Package: AL-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 3µA @ 200V
    • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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  • RECTIFIER DIODE, 3A, 50V
    Harris Corporation
    • Manufacturer: Harris Corporation
    • Mounting Type: Through Hole
    • Package / Case: DO-204, Axial
    • Supplier Device Package: AL-4
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 35ns
    • Current - Reverse Leakage @ Vr: 3µA @ 50V
    • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 175°C
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