• Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 22
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
G5S06506DT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 24A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 6A 650V 0ns -55°C ~ 175°C
G3S06504D SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G4S12020D SIC SCHOTTKY DIODE 1200V 20A 2-P Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 75A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 1200V 2600pF @ 0V, 1MHz 1.7V @ 20A 1200V 0ns -55°C ~ 175°C
G3S06503D SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
G5S06510DT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 38A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.5V @ 10A 650V 0ns -55°C ~ 175°C
G3S06508D SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 25.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G4S06515DT SIC SCHOTTKY DIODE 650V 15A 2-PI Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 38A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 645pF @ 0V, 1MHz 1.7V @ 15A 650V 0ns -55°C ~ 175°C
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