Semiconductors, Diodes Global Power Technology-GPT TO-263

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
  • 10
  • 15
  • 50
  • 100
List Table
Found: 22
  • G5S06508DT
    SIC SCHOTTKY DIODE 650V 8A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 32A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G3S06502D
    SIC SCHOTTKY DIODE 650V 2A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 9A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 123pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G5S06505DT
    SIC SCHOTTKY DIODE 650V 5A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 24A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 395pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G5S12010D
    SIC SCHOTTKY DIODE 1200V 10A 2-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 30.9A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 825pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • GAS06520D
    SIC SCHOTTKY DIODE 650V 20A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 79.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 1390pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G3S06506D
    SIC SCHOTTKY DIODE 650V 6A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 22.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 424pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G4S06510DT
    SIC SCHOTTKY DIODE 650V 10A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 32A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G4S06508DT
    SIC SCHOTTKY DIODE 650V 8A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 24A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 395pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G5S12008D
    SIC SCHOTTKY DIODE 1200V 8A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 26.1A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G3S12010D
    SIC SCHOTTKY DIODE 1200V 10A 2-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 33.2A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 765pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G5S12005D
    SIC SCHOTTKY DIODE 1200V 5A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 21A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 424pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G3S06510D
    SIC SCHOTTKY DIODE 650V 10A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 34A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 690pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G3S12002D
    SIC SCHOTTKY DIODE 1200V 2A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 7A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 136pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G3S06505D
    SIC SCHOTTKY DIODE 650V 5A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 22.6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 424pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • G3S12005D
    SIC SCHOTTKY DIODE 1200V 5A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    • Supplier Device Package: TO-263
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 34A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 475pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
    Info from the market
    • Total warehouses:
    • Total offers:
    • Offers with a price:
    • Offers in stock:
  • 10
  • 15
  • 50
  • 100