-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G3S12002C | SIC SCHOTTKY DIODE 1200V 2A 2-PI | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8.8A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 170pF @ 0V, 1MHz | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C |
| G3S06505C | SIC SCHOTTKY DIODE 650V 5A 2-PIN | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 22.6A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 424pF @ 0V, 1MHz | 1.7V @ 5A | 650V | 0ns | -55°C ~ 175°C |
| G3S12010C | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 33.2A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 765pF @ 0V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C |
| G3S06508C | SIC SCHOTTKY DIODE 650V 6A 2-PIN | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 25.5A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| G3S12005C | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 34A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 475pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C |
| G5S06508CT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 31A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C |
| G5S12005C | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20.95A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 424pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C |
| G5S06504CT | SIC SCHOTTKY DIODE 650V 4A 2-PIN | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 13.8A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.6V @ 4A | 650V | 0ns | -55°C ~ 175°C |
| G4S06510CT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 31A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C |
| G3S12003C | SIC SCHOTTKY DIODE 1200V 3A 2-PI | Global Power Technology-GPT | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 260pF @ 0V, 1MHz | 1.7V @ 3A | 1200V | 0ns | -55°C ~ 175°C |
- 10
- 15
- 50
- 100