-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G3S12020P | SIC SCHOTTKY DIODE 1200V 20A 2-P | Global Power Technology-GPT | TO-247-2 | 64.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 2600pF @ 0V, 1MHz | 1.7V @ 20A | 1200V | 0ns | -55°C ~ 175°C | ||
| GAS06520P | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology-GPT | TO-247-2 | 66.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1390pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S06520P | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology-GPT | TO-247-2 | 60A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1170pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C | ||
| G5S06510PT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology-GPT | TO-247-2 | 39A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.5V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S17005P | SIC SCHOTTKY DIODE 1700V 5A 2-PI | Global Power Technology-GPT | TO-247-2 | 29.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1700V | 780pF @ 0V, 1MHz | 1.7V @ 5A | 1700V | 0ns | -55°C ~ 175°C | ||
| G3S12050P | SIC SCHOTTKY DIODE 1200V 50A 2-P | Global Power Technology-GPT | TO-247-2 | 117A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 7500pF @ 0V, 1MHz | 1.8V @ 150A | 1200V | 0ns | -55°C ~ 175°C | ||
| G4S12020PM | SIC SCHOTTKY DIODE 1200V 20A 2-P | Global Power Technology-GPT | TO-247-2 | 64.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 30µA @ 1700V | 2600pF @ 0V, 1MHz | 1.6V @ 20A | 1200V | 0ns | -55°C ~ 175°C | ||
| G4S12020P | SIC SCHOTTKY DIODE 1200V 20A 2-P | Global Power Technology-GPT | TO-247-2 | 64.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 2600pF @ 0V, 1MHz | 1.7V @ 20A | 1200V | 0ns | -55°C ~ 175°C | ||
| G3S065100P | SIC SCHOTTKY DIODE 650V 100A 2-P | Global Power Technology-GPT | TO-247-2 | 20A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 13500pF @ 0V, 1MHz | 1.7V @ 40A | 650V | 0ns | -55°C ~ 175°C | ||
| G4S06515PT | SIC SCHOTTKY DIODE 650V 15A 2-PI | Global Power Technology-GPT | TO-247-2 | 39A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C |
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