• Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 33
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G3S12040B SIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 15A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 64.5A (DC)
G4S12040BM SIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 30µA @ 1200V 1.6V @ 20A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 64.5A (DC)
G3S06504B SIC SCHOTTKY DIODE 650V 4A 3-PIN Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 4A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 9A (DC)
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