Semiconductors, Diodes Global Power Technology-GPT TO-220F

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 28
  • G3S06505H
    SIC SCHOTTKY DIODE 650V 5A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 15.4A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 424pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G4S06510HT
    SIC SCHOTTKY DIODE 650V 10A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 20A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S06520H
    SIC SCHOTTKY DIODE 650V 20A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 26A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 1170pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S12003H
    SIC SCHOTTKY DIODE 1200V 3A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 9A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 100µA @ 1200V
    • Capacitance @ Vr, F: 260pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S12015H
    SIC SCHOTTKY DIODE 1200V 15A 2-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 21A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 1700pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G5S06510HT
    SIC SCHOTTKY DIODE 650V 10A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 23.8A (DC)
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S06502H
    SIC SCHOTTKY DIODE 650V 2A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 9A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 123pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S12005H
    SIC SCHOTTKY DIODE 1200V 5A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 21A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 475pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G5S12020H
    SIC SCHOTTKY DIODE 1200V 20A 2-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 24.6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 1320pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S06506H
    SIC SCHOTTKY DIODE 650V 6A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 15.4A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 424pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S12010H
    SIC SCHOTTKY DIODE 1200V 10A 2-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 16.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 765pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G5S12008H
    SIC SCHOTTKY DIODE 1200V 8A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 16A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 550pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S12002H
    SIC SCHOTTKY DIODE 1200V 2A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 7.3A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Capacitance @ Vr, F: 136pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • GAS06520H
    SIC SCHOTTKY DIODE 650V 20A 2-PI
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 30A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 1390pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G3S06503H
    SIC SCHOTTKY DIODE 650V 3A 2-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: TO-220F
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 10A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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