Semiconductors, Diodes Global Power Technology-GPT 8-DFN (4.9x5.75)

    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 3
  • G5S6506Z
    SIC SCHOTTKY DIODE 650V 6A DFN5*
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-DFN (4.9x5.75)
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 30.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 395pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G4S6508Z
    SIC SCHOTTKY DIODE 650V 8A DFN5*
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-DFN (4.9x5.75)
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 30.5A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 395pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • G5S6504Z
    SIC SCHOTTKY DIODE 650V 4A DFN5*
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Surface Mount
    • Package / Case: 8-PowerTDFN
    • Supplier Device Package: 8-DFN (4.9x5.75)
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 15.45A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • 10
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  • 100