• Manufacturer
  • Diode Type
  • Supplier Device Package
    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 184
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G5S12002H SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 7.5A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 170pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
G5S06506DT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 24A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 6A 650V 0ns -55°C ~ 175°C
GAS06520L SIC SCHOTTKY DIODE 650V 20A 3-PI Global Power Technology-GPT TO-247-3 66.5A (DC) Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1390pF @ 0V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
G3S12015P SIC SCHOTTKY DIODE 1200V 15A 2-P Global Power Technology-GPT TO-247-2 42A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1379pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G3S12010P SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-247-2 37A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 765pF @ 0V, 1MHz 1.7V @ 110A 1200V 0ns -55°C ~ 175°C
G5S06506HT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 18.5A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 6A 650V 0ns -55°C ~ 175°C
G5S6506Z SIC SCHOTTKY DIODE 650V 6A DFN5* Global Power Technology-GPT 8-PowerTDFN 30.5A (DC) Silicon Carbide Schottky Surface Mount 8-DFN (4.9x5.75) No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 6A 650V 0ns -55°C ~ 175°C
G4S06506CT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 13.8A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.8V @ 6A 650V 0ns -55°C ~ 175°C
G3S12002C SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 8.8A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 1200V 170pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
G5S12016BM SIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 8A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 27.9A (DC)
G4S06530BT SIC SCHOTTKY DIODE 650V 30A 3-PI Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 15A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 39A (DC)
G4S12010PM SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-247-2 33.2A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 30µA @ 1700V 1200V 0ns -55°C ~ 175°C
G5S12015PM SIC SCHOTTKY DIODE 1200V 15A 2-P Global Power Technology-GPT TO-247-2 55A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1370pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G3S06504D SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G4S06508HT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 18.5A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
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