• Manufacturer
  • Diode Type
  • Supplier Device Package
    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 184
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G5S06508AT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-220-2 30.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.5V @ 8A 650V 0ns -55°C ~ 175°C
G4S06508DT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 24A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G3S06510A SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-220-2 35A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 690pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G3S12010H SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-220-2 Full Pack 16.5A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 765pF @ 0V, 1MHz 1.7V @ 10A 1200V 0ns -55°C ~ 175°C
G5S12008H SIC SCHOTTKY DIODE 1200V 8A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 16A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 550pF @ 0V, 1MHz 1.7V @ 8A 1200V 0ns -55°C ~ 175°C
G3S12020B SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT TO-247-2 Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 10A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 37A (DC)
G5S12008D SIC SCHOTTKY DIODE 1200V 8A 2-PI Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 26.1A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 1200V 550pF @ 0V, 1MHz 1.7V @ 8A 1200V 0ns -55°C ~ 175°C
G3S06560B SIC SCHOTTKY DIODE 650V 4A 3-PIN Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 30A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 95A (DC)
G5S06504QT SIC SCHOTTKY DIODE 650V 4A DFN 8 Global Power Technology-GPT 4-PowerTSFN 14A (DC) Silicon Carbide Schottky Surface Mount 4-DFN (8x8) No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.55V @ 4A 650V 0ns -55°C ~ 175°C
G3S06505A SIC SCHOTTKY DIODE 650V 5A 2-PIN Global Power Technology-GPT TO-220-2 22.6A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 5A 650V 0ns -55°C ~ 175°C
G3S12015L SIC SCHOTTKY DIODE 1200V 15A 3-P Global Power Technology-GPT TO-247-3 55A (DC) Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1700pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G3S17020B SIC SCHOTTKY DIODE 1700V 20A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 100µA @ 1700V 1.7V @ 10A 1700V 0ns -55°C ~ 175°C 1 Pair Common Cathode 24A (DC)
G3S06504C SIC SCHOTTKY DIODE 650V 4A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 11.5A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 4A 650V 0ns -55°C ~ 175°C
G5S12015L SIC SCHOTTKY DIODE 1200V 15A 3-P Global Power Technology-GPT TO-247-3 55A (DC) Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1370pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G5S06506CT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 24A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.5V @ 6A 650V 0ns -55°C ~ 175°C
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