• Manufacturer
  • Diode Type
  • Supplier Device Package
    • Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 184
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G4S06510QT SIC SCHOTTKY DIODE 650V 10A DFN8 Global Power Technology-GPT 4-PowerTSFN 44.9A (DC) Silicon Carbide Schottky Surface Mount 4-DFN (8x8) No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G5S12010D SIC SCHOTTKY DIODE 1200V 10A 2-P Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 30.9A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 1200V 825pF @ 0V, 1MHz 1.7V @ 10A 1200V 0ns -55°C ~ 175°C
G5S06502AT SIC SCHOTTKY DIODE 650V 2A 2-PIN Global Power Technology-GPT TO-220-2 9.6A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 124pF @ 0V, 1MHz 1.5V @ 2A 650V 0ns -55°C ~ 175°C
G5S12002A SIC SCHOTTKY DIODE 1200V 2A 2-PI Global Power Technology-GPT TO-220-2 10A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 170pF @ 0V, 1MHz 1.7V @ 2A 1200V 0ns -55°C ~ 175°C
G5S12020H SIC SCHOTTKY DIODE 1200V 20A 2-P Global Power Technology-GPT TO-220-2 Full Pack 24.6A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 1320pF @ 0V, 1MHz 1.7V @ 20A 1200V 0ns -55°C ~ 175°C
G3S06506H SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-220-2 Full Pack 15.4A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 6A 650V 0ns -55°C ~ 175°C
GAS06520D SIC SCHOTTKY DIODE 650V 20A 2-PI Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 79.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 1390pF @ 0V, 1MHz 1.7V @ 20A 650V 0ns -55°C ~ 175°C
G3S06506D SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 22.5A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 424pF @ 0V, 1MHz 1.7V @ 6A 650V 0ns -55°C ~ 175°C
G4S06506AT SIC SCHOTTKY DIODE 650V 6A 2-PIN Global Power Technology-GPT TO-220-2 11.6A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.8V @ 6A 650V 0ns -55°C ~ 175°C
G5S12005A SIC SCHOTTKY DIODE 1200V 5A 2-PI Global Power Technology-GPT TO-220-2 20.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 1200V 424pF @ 0V, 1MHz 1.7V @ 5A 1200V 0ns -55°C ~ 175°C
G3S12003A SIC SCHOTTKY DIODE 1200V 3A 2-PI Global Power Technology-GPT TO-220-2 12A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 100µA @ 1200V 260pF @ 0V, 1MHz 1.7V @ 3A 1200V 0ns -55°C ~ 175°C
G5S12040BM SIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 1200V 1.7V @ 20A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 62A (DC)
G3S06510C SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-252-3, DPak (2 Leads + Tab), SC-63 34A (DC) Silicon Carbide Schottky Surface Mount TO-252 No Recovery Time > 500mA (Io) 50µA @ 650V 690pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G4S06510DT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 32A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 10A 650V 0ns -55°C ~ 175°C
G3S06503A SIC SCHOTTKY DIODE 650V 3A 2-PIN Global Power Technology-GPT TO-220-2 11.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 181pF @ 0V, 1MHz 1.7V @ 3A 650V 0ns -55°C ~ 175°C
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