• Manufacturer
  • Diode Type
  • Supplier Device Package
Found: 184
Partnumber Description Manufacturer
Package / Case
Current - Average Rectified (Io)
Diode Type
Mounting Type
Supplier Device Package
Speed
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Voltage - DC Reverse (Vr) (Max)
Reverse Recovery Time (trr)
Operating Temperature - Junction
Diode Configuration
Current - Average Rectified (Io) (per Diode)
G52YT SIC SCHOTTKY DIODE 650V 2A SMA Global Power Technology-GPT DO-214AC, SMA 5.8A (DC) Silicon Carbide Schottky Surface Mount SMA No Recovery Time > 500mA (Io) 50µA @ 650V 116.75pF @ 0V, 1MHz 1.7V @ 2A 650V 0ns -55°C ~ 175°C
G3S12015H SIC SCHOTTKY DIODE 1200V 15A 2-P Global Power Technology-GPT TO-220-2 Full Pack 21A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 1200V 1700pF @ 0V, 1MHz 1.7V @ 15A 1200V 0ns -55°C ~ 175°C
G5S12040PP SIC SCHOTTKY DIODE 1200V 40A 2-P Global Power Technology-GPT TO-247-2 Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 100µA @ 1200V 1.7V @ 40A 1200V 0ns -55°C ~ 175°C 1 Pair Common Anode 115A (DC)
G4S06508QT SIC SCHOTTKY DIODE 650V 8A DFN8* Global Power Technology-GPT 4-PowerTSFN 34A (DC) Silicon Carbide Schottky Surface Mount 4-DFN (8x8) No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G3S06508A SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-220-2 25.5A (DC) Silicon Carbide Schottky Through Hole TO-220AC No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G3S06510B SIC SCHOTTKY DIODE 650V 10A 3-PI Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 5A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 27A (DC)
G3S06512B SIC SCHOTTKY DIODE 650V 12A 3-PI Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 6A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 27A (DC)
G4S06508JT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-220-2 Isolated Tab 23.5A (DC) Silicon Carbide Schottky Through Hole TO-220ISO No Recovery Time > 500mA (Io) 50µA @ 650V 395pF @ 0V, 1MHz 1.7V @ 8A 650V 0ns -55°C ~ 175°C
G5S06510HT SIC SCHOTTKY DIODE 650V 10A 2-PI Global Power Technology-GPT TO-220-2 Full Pack 23.8A (DC) Silicon Carbide Schottky Through Hole TO-220F No Recovery Time > 500mA (Io) 50µA @ 650V 650V 0ns -55°C ~ 175°C
G4S06516BT SIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 8A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 25.9A (DC)
G3S06516B SIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 50µA @ 650V 1.7V @ 8A 650V 0ns -55°C ~ 175°C 1 Pair Common Cathode 25.5A (DC)
G5S06508PT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-247-2 31.2A (DC) Silicon Carbide Schottky Through Hole TO-247AC No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.5V @ 8A 650V 0ns -55°C ~ 175°C
G5S06508DT SIC SCHOTTKY DIODE 650V 8A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 32A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 550pF @ 0V, 1MHz 1.5V @ 8A 650V 0ns -55°C ~ 175°C
G3S06502D SIC SCHOTTKY DIODE 650V 2A 2-PIN Global Power Technology-GPT TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 9A (DC) Silicon Carbide Schottky Surface Mount TO-263 No Recovery Time > 500mA (Io) 50µA @ 650V 123pF @ 0V, 1MHz 1.7V @ 2A 650V 0ns -55°C ~ 175°C
G5S12020BM SIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology-GPT TO-247-3 Silicon Carbide Schottky Through Hole TO-247AB No Recovery Time > 500mA (Io) 30µA @ 1200V 1.7V @ 10A 1200V 0ns -55°C ~ 175°C 1 Pair Common Cathode 33A (DC)