Diodes Global Power Technology Co. Ltd TO-247AB

Diodes - RF 0
Diodes - Rectifiers - Arrays 33
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 33

G3S06510B

SIC SCHOTTKY DIODE 650V 10A 3-PI

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 27A (DC)
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G4S12040BM

SIC SCHOTTKY DIODE 1200V 40A 3-P

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 64.5A (DC)
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G3S06504B

SIC SCHOTTKY DIODE 650V 4A 3-PIN

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 9A (DC)
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G5S12020BM

SIC SCHOTTKY DIODE 1200V 20A 3-P

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 33A (DC)
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G3S06512B

SIC SCHOTTKY DIODE 650V 12A 3-PI

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 27A (DC)
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G5S12016B

SIC SCHOTTKY DIODE 1200V 16A 3-P

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 27.9A (DC)
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G3S12006B

SIC SCHOTTKY DIODE 1200V 6A 3-PI

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 14A (DC)
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G3S12040B

SIC SCHOTTKY DIODE 1200V 40A 3-P

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 64.5A (DC)
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G3S06506B

SIC SCHOTTKY DIODE 650V 6A 3-PIN

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 14A (DC)
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G3S12030B

SIC SCHOTTKY DIODE 1200V 30A 3-P

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 42A (DC)
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G4S12020BM

SIC SCHOTTKY DIODE 1200V 20A 3-P

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 33.2A (DC)
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G5S12010BM

SIC SCHOTTKY DIODE 1200V 10A 3-P

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 19.35A (DC)
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G5S12030BM

SIC SCHOTTKY DIODE 1200V 30A 3-P

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 55A (DC)
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G3S06540B

SIC SCHOTTKY DIODE 650V 40A 3-PI

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 60A (DC)
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G3S17020B

SIC SCHOTTKY DIODE 1700V 20A 3-P

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1700V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 1700V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 24A (DC)
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