- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G4S06508HT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 18.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
G4S06510DT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology Co. Ltd | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 32A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.7V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
G5S06504QT | SIC SCHOTTKY DIODE 650V 4A DFN 8 | Global Power Technology Co. Ltd | 4-PowerTSFN | 14A (DC) | Silicon Carbide Schottky | Surface Mount | 4-DFN (8x8) | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.55V @ 4A | 650V | 0ns | -55°C ~ 175°C | ||
G5S12016BM | SIC SCHOTTKY DIODE 1200V 16A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 8A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 27.9A (DC) | ||
G3S12003C | SIC SCHOTTKY DIODE 1200V 3A 2-PI | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 260pF @ 0V, 1MHz | 1.7V @ 3A | 1200V | 0ns | -55°C ~ 175°C | ||
G3S06503C | SIC SCHOTTKY DIODE 650V 3A 2-PIN | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 11.5A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.7V @ 3A | 650V | 0ns | -55°C ~ 175°C | ||
G5S12010D | SIC SCHOTTKY DIODE 1200V 10A 2-P | Global Power Technology Co. Ltd | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 30.9A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 825pF @ 0V, 1MHz | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C | ||
G5S12005D | SIC SCHOTTKY DIODE 1200V 5A 2-PI | Global Power Technology Co. Ltd | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 21A (DC) | Silicon Carbide Schottky | Surface Mount | TO-263 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 424pF @ 0V, 1MHz | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | ||
G4S06515PT | SIC SCHOTTKY DIODE 650V 15A 2-PI | Global Power Technology Co. Ltd | TO-247-2 | 39A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C | ||
G5S12020B | SIC SCHOTTKY DIODE 1200V 20A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 10A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 33A (DC) | ||
G5S06520AT | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology Co. Ltd | TO-220-2 | 68.8A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1600pF @ 0V, 1MHz | 1.5V @ 20A | 650V | 0ns | -55°C ~ 175°C | ||
G3S12003A | SIC SCHOTTKY DIODE 1200V 3A 2-PI | Global Power Technology Co. Ltd | TO-220-2 | 12A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 100µA @ 1200V | 260pF @ 0V, 1MHz | 1.7V @ 3A | 1200V | 0ns | -55°C ~ 175°C | ||
G5S06508CT | SIC SCHOTTKY DIODE 650V 8A 2-PIN | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 31A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
G3S12002C | SIC SCHOTTKY DIODE 1200V 2A 2-PI | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8.8A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 170pF @ 0V, 1MHz | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C | ||
GAS06520P | SIC SCHOTTKY DIODE 650V 20A 2-PI | Global Power Technology Co. Ltd | TO-247-2 | 66.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1390pF @ 0V, 1MHz | 1.7V @ 20A | 650V | 0ns | -55°C ~ 175°C |
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