- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| G5S06508QT | SIC SCHOTTKY DIODE 650V 8A DFN8* | Global Power Technology Co. Ltd | 4-PowerTSFN | 44.9A (DC) | Silicon Carbide Schottky | Surface Mount | 4-DFN (8x8) | No Recovery Time > 500mA (Io) | 50µA @ 650V | 550pF @ 0V, 1MHz | 1.5V @ 8A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S17005A | SIC SCHOTTKY DIODE 1700V 5A 2-PI | Global Power Technology Co. Ltd | TO-220-2 | 28A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1700V | 780pF @ 0V, 1MHz | 1.7V @ 5A | 1700V | 0ns | -55°C ~ 175°C | ||
| G4S12020P | SIC SCHOTTKY DIODE 1200V 20A 2-P | Global Power Technology Co. Ltd | ||||||||||||||
| G5S06506QT | SIC SCHOTTKY DIODE 650V 6A DFN8* | Global Power Technology Co. Ltd | 4-PowerTSFN | 34A (DC) | Silicon Carbide Schottky | Surface Mount | 4-DFN (8x8) | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.5V @ 6A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S06560B | SIC SCHOTTKY DIODE 650V 4A 3-PIN | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 30A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 95A (DC) | ||
| G5S12002H | SIC SCHOTTKY DIODE 1200V 2A 2-PI | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 7.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 170pF @ 0V, 1MHz | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C | ||
| G5S06506HT | SIC SCHOTTKY DIODE 650V 6A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 Full Pack | 18.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220F | No Recovery Time > 500mA (Io) | 50µA @ 650V | 395pF @ 0V, 1MHz | 1.5V @ 6A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S12002A | SIC SCHOTTKY DIODE 1200V 2A 2-PI | Global Power Technology Co. Ltd | TO-220-2 | 7A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 136pF @ 0V, 1MHz | 1.7V @ 2A | 1200V | 0ns | -55°C ~ 175°C | ||
| G4S06530BT | SIC SCHOTTKY DIODE 650V 30A 3-PI | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 15A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 39A (DC) | ||
| G5S06510AT | SIC SCHOTTKY DIODE 650V 10A 2-PI | Global Power Technology Co. Ltd | TO-220-2 | 36A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 645pF @ 0V, 1MHz | 1.5V @ 10A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S12010BM | SIC SCHOTTKY DIODE 1200V 10A 3-P | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 1200V | 1.7V @ 5A | 1200V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 19.8A (DC) | ||
| G3S06530PM | SIC SCHOTTKY DIODE 650V 30A 2-PI | Global Power Technology Co. Ltd | TO-247-2 | 92A (DC) | Silicon Carbide Schottky | Through Hole | TO-247AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 30A | 650V | 0ns | ||||
| G3S06504A | SIC SCHOTTKY DIODE 650V 4A 2-PIN | Global Power Technology Co. Ltd | TO-220-2 | 11.5A (DC) | Silicon Carbide Schottky | Through Hole | TO-220AC | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.7V @ 4A | 650V | 0ns | -55°C ~ 175°C | ||
| G4S06506CT | SIC SCHOTTKY DIODE 650V 6A 2-PIN | Global Power Technology Co. Ltd | TO-252-3, DPak (2 Leads + Tab), SC-63 | 13.8A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 181pF @ 0V, 1MHz | 1.8V @ 6A | 650V | 0ns | -55°C ~ 175°C | ||
| G3S06508B | SIC SCHOTTKY DIODE 650V 8A 3-PIN | Global Power Technology Co. Ltd | TO-247-3 | Silicon Carbide Schottky | Through Hole | TO-247AB | No Recovery Time > 500mA (Io) | 50µA @ 650V | 1.7V @ 8A | 650V | 0ns | -55°C ~ 175°C | 1 Pair Common Cathode | 14A (DC) |
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