Diodes GeneSiC Semiconductor SOT-227

Diodes - RF 0
Diodes - Rectifiers - Arrays 86
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 86

MBR2X160A200

DIODE SCHOTTKY 200V 160A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 160A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 200V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 160A
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GD2X30MPS06N

650V 60A SOT-227 SIC SCHOTTKY MP

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Speed: No Recovery Time > 500mA (Io)
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 42A (DC)
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MUR2X030A10

DIODE GEN PURP 1000V 30A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Voltage - Forward (Vf) (Max) @ If: 2.35V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 85ns
- Current - Reverse Leakage @ Vr: 25µA @ 1000V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 30A
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MUR2X100A04

DIODE GEN PURP 400V 100A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 100A
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MBR2X120A045

DIODE SCHOTTKY 45V 120A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 120A
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MBR2X030A060

DIODE SCHOTTKY 60V 30A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 30A
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MUR2X060A02

DIODE GEN PURP 200V 60A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 60A
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GC2X50MPS06-227

DIODE MOD SCHOT 650V 104A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 10µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 104A (DC)
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GB2X50MPS12-227

SIC DIODE 1200V 100A SOT-227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 93A (DC)
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MBR2X080A080

DIODE SCHOTTKY 80V 80A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 80A
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MBR2X080A060

DIODE SCHOTTKY 60V 80A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 80A
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