-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR2X160A200 | DIODE SCHOTTKY 200V 160A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 200V | 920mV @ 160A | 200V | -40°C ~ 150°C | 2 Independent | 160A | ||
| GD2X30MPS06N | 650V 60A SOT-227 SIC SCHOTTKY MP | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 650V | -55°C ~ 175°C | 2 Independent | 42A (DC) | SiC Schottky MPS™ | |||
| MUR2X030A10 | DIODE GEN PURP 1000V 30A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 1000V | 2.35V @ 30A | 1000V | 85ns | -55°C ~ 175°C | 2 Independent | 30A | |
| MUR2X100A04 | DIODE GEN PURP 400V 100A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 100A | 400V | 90ns | -55°C ~ 175°C | 2 Independent | 100A | |
| MBR2X120A045 | DIODE SCHOTTKY 45V 120A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 700mV @ 120A | 45V | -40°C ~ 150°C | 2 Independent | 120A | ||
| MBR2X030A060 | DIODE SCHOTTKY 60V 30A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 750mV @ 30A | 60V | -40°C ~ 150°C | 2 Independent | 30A | ||
| MUR2X060A02 | DIODE GEN PURP 200V 60A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 200V | 1V @ 60A | 200V | 75ns | -55°C ~ 175°C | 2 Independent | 60A | |
| GC2X50MPS06-227 | DIODE MOD SCHOT 650V 104A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 10µA @ 650V | 1.8V @ 50A | 650V | 0ns | -55°C ~ 175°C | 2 Independent | 104A (DC) | SiC Schottky MPS™ |
| GB2X50MPS12-227 | SIC DIODE 1200V 100A SOT-227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Silicon Carbide Schottky | Chassis Mount | SOT-227 | No Recovery Time > 500mA (Io) | 40µA @ 1200V | 1.8V @ 50A | 1200V | 0ns | -55°C ~ 175°C | 2 Independent | 93A (DC) | SiC Schottky MPS™ |
| MBR2X080A080 | DIODE SCHOTTKY 80V 80A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 80A | 80V | -40°C ~ 150°C | 2 Independent | 80A | ||
| MBR2X080A060 | DIODE SCHOTTKY 60V 80A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 60V | 750mV @ 80A | 60V | -40°C ~ 150°C | 2 Independent | 80A |
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