-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
-
- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1700V
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1700V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 136A (DC)
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 60A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 120A
-
- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1700V
- Speed: No Recovery Time > 500mA (Io)
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 115A (DC)
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 150V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 100A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 180V
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 180V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 80A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 30A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 200V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 80A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 100A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 160A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 150V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 160A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 120A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 60A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 100A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 80A
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 60A
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