Diodes GeneSiC Semiconductor D61-3M

Diodes - RF 0
Diodes - Rectifiers - Arrays 28
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 28

FST7345M

DIODE SCHOTTKY 45V 35A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 35A
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FST8345M

DIODE MODULE 45V 80A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1.5mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 80A (DC)
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FST6360M

DIODE SCHOTTKY 60V 30A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 30A
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FST6330M

DIODE SCHOTTKY 30V 30A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 30A
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FST8380M

DIODE MODULE 80V 80A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1.5mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 80A (DC)
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FST7380M

DIODE SCHOTTKY 80V 35A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 35A
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FST7320M

DIODE SCHOTTKY 20V 35A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 35A
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FST8340M

DIODE MODULE 40V 80A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1.5mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 80A (DC)
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FST63100M

DIODE SCHOTTKY 100V 30A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 30A
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FST6345M

DIODE SCHOTTKY 45V 30A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 30A
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UFT7360M

DIODE GEN PURP 600V 70A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 20µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 70A
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FST7335M

DIODE SCHOTTKY 35V 35A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 35A
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FST7360M

DIODE SCHOTTKY 60V 35A D61-3M

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D61-3M
- Supplier Device Package: D61-3M
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 35A
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