- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FR12D02 | DIODE GEN PURP 200V 12A DO4 | GeneSiC Semiconductor | DO-203AA, DO-4, Stud | 12A | Standard | Chassis, Stud Mount | DO-4 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 100V | 800mV @ 12A | 200V | 200ns | -65°C ~ 150°C | ||||||||
MUR7020 | DIODE GEN PURP 200V 70A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 70A | Standard | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1V @ 70A | 200V | 75ns | -55°C ~ 150°C | ||||||||
MBR7540R | DIODE SCHOTTKY REV 40V DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 75A | Schottky, Reverse Polarity | Chassis, Stud Mount | DO-5 | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 75A | 40V | -65°C ~ 150°C | |||||||||
FST12060 | DIODE MODULE 60V 120A TO249AB | GeneSiC Semiconductor | TO-249AB | Schottky | Chassis Mount | TO-249AB | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 20V | 750mV @ 120A | 60V | -55°C ~ 150°C | 1 Pair Common Cathode | 120A (DC) | ||||||||
GE10MPS06E | 650V 10A TO-252-2 SIC SCHOTTKY M | GeneSiC Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 | 26A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | No Recovery Time > 500mA (Io) | 466pF @ 1V, 1MHz | 650V | -55°C ~ 175°C | SiC Schottky MPS™ | |||||||||
MURTA20040 | DIODE GEN PURP 400V 100A 3 TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 100A | 400V | -55°C ~ 150°C | 1 Pair Common Cathode | 100A | ||||||||
S320Q | DIODE GEN PURP 1.2KV 320A DO205 | GeneSiC Semiconductor | DO-205AB, DO-9, Stud | 320A | Standard | Chassis, Stud Mount | DO-205AB, DO-9 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 600V | 1.2V @ 300A | 1200V | -60°C ~ 180°C | |||||||||
GBPC1510W | BRIDGE RECT 1P 1KV 15A GBPC-W | GeneSiC Semiconductor | 4-Square, GBPC-W | 1kV | 15A | Single Phase | Through Hole | GBPC-W | Standard | -55°C ~ 150°C (TJ) | 5µA @ 1000V | 1.1V @ 7.5A | |||||||||
MBRT300200 | DIODE SCHOTTKY 200V 150A 3 TOWER | GeneSiC Semiconductor | Three Tower | Schottky | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 200V | 920mV @ 150A | 200V | -55°C ~ 150°C | 1 Pair Common Cathode | 150A | ||||||||
MUR10020CT | DIODE MODULE 200V 50A 2TOWER | GeneSiC Semiconductor | Twin Tower | Standard | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 50A | 200V | 75ns | -55°C ~ 150°C | 1 Pair Common Cathode | 50A | |||||||
BR82 | BRIDGE RECT 1PHASE 200V 8A BR-8 | GeneSiC Semiconductor | 4-Square, BR-8 | 200V | 8A | Single Phase | Through Hole | BR-8 | Standard | -65°C ~ 125°C (TJ) | 10µA @ 200V | 1.1V @ 4A | |||||||||
KBU6M | BRIDGE RECT 1PHASE 1KV 6A KBU | GeneSiC Semiconductor | 4-SIP, KBU | 1kV | 6A | Single Phase | Through Hole | KBU | Standard | -55°C ~ 150°C (TJ) | 10µA @ 1000V | 1V @ 6A | |||||||||
MBR20045CT | DIODE MODULE 45V 200A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 5mA @ 20V | 650mV @ 100A | 45V | 1 Pair Common Cathode | 200A (DC) | |||||||||
MSRTA50060(A) | DIODE MODULE 600V 500A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 500A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 500A (DC) | ||||||||
S70YR | DIODE GEN PURP REV 1.6KV 70A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 70A | Standard, Reverse Polarity | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 100V | 1.1V @ 70A | 1600V | -65°C ~ 150°C |
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