-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Speed
|
Current - Reverse Leakage @ Vr
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Series
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C3D10060A | DIODE SCHOTTKY 600V 10A TO220-2 | Cree/Wolfspeed | TO-220-2 | 30A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 50µA @ 600V | 480pF @ 0V, 1MHz | 1.8V @ 10A | 600V | 0ns | -55°C ~ 175°C | Z-Rec® |
| C6D10065A | 10A 650V G6 ZREC SIC SCHOTTKY DI | Cree/Wolfspeed | TO-220-2 | 37A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 50µA @ 650V | 611pF @ 0V, 1MHz | 1.5V @ 10A | 650V | 0ns | -55°C ~ 175°C | Z-Rec® |
| E4D10120A | E SERIES, 10 AMP, 1200V G4 SCHOT | Cree/Wolfspeed | TO-220-2 | 33A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 200µA @ 1200V | 777pF @ 0V, 1MHz | 1.8V @ 10A | 1200V | -55°C ~ 175°C | Automotive, AEC-Q101, E | |
| C4D10120A | DIODE SCHOTTKY 1.2KV 10A TO220-2 | Cree/Wolfspeed | TO-220-2 | 33A (DC) | Silicon Carbide Schottky | Through Hole | TO-220-2 | No Recovery Time > 500mA (Io) | 250µA @ 1200V | 754pF @ 0V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | Z-Rec® |
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