Semiconductors, Diodes Central Semiconductor Corp GPR-4AM

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  • TRANSISTOR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 500V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 250ns
    • Current - Reverse Leakage @ Vr: 1µA @ 500V
    • Capacitance @ Vr, F: 110pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 1µA @ 100V
    • Capacitance @ Vr, F: 175pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 1µA @ 100V
    • Capacitance @ Vr, F: 175pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • TRANSISTOR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 500V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 250ns
    • Current - Reverse Leakage @ Vr: 1µA @ 500V
    • Capacitance @ Vr, F: 110pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • TRANSISTOR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 1µA @ 200V
    • Capacitance @ Vr, F: 150pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • TRANSISTOR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 1µA @ 400V
    • Capacitance @ Vr, F: 120pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • TRANSISTOR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 1µA @ 100V
    • Capacitance @ Vr, F: 175pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • TRANSISTOR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 500V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 250ns
    • Current - Reverse Leakage @ Vr: 1µA @ 500V
    • Capacitance @ Vr, F: 110pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • TRANSISTOR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 200V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 1µA @ 200V
    • Capacitance @ Vr, F: 150pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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  • TRANSISTOR
    Central Semiconductor Corp
    • Manufacturer: Central Semiconductor Corp
    • Mounting Type: Through Hole
    • Package / Case: R-4, Axial
    • Supplier Device Package: GPR-4AM
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 400V
    • Current - Average Rectified (Io): 3A
    • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 150ns
    • Current - Reverse Leakage @ Vr: 1µA @ 400V
    • Capacitance @ Vr, F: 120pF @ 12V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 200°C
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