Semiconductors, Diodes Silicon Carbide Schottky

Diodes - RF 0
Diodes - Rectifiers - Arrays 2069
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 2069

G3S06502H

SIC SCHOTTKY DIODE 650V 2A 2-PIN

Global Power Technology Co. Ltd
- Manufacturer: Global Power Technology Co. Ltd
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 123pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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FFSPF0865A

650V 8A SIC SBD

onsemi
- Manufacturer: onsemi
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2FS
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 650V
- Capacitance @ Vr, F: 463pF @ 1V, 100kHz
- Operating Temperature - Junction: -55°C ~ 175°C
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UJ3D1210K2

1200V 10A SIC SCHOTTKY DIODE G3,

UnitedSiC
- Manufacturer: UnitedSiC
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 110µA @ 1200V
- Capacitance @ Vr, F: 510pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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SCS210AJHRTLL

DIODE SCHOTTKY 650V 10A TO263AB

Rohm Semiconductor
- Manufacturer: Rohm Semiconductor
- Series: Automotive, AEC-Q101
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 600V
- Capacitance @ Vr, F: 365pF @ 1V, 1MHz
- Operating Temperature - Junction: 175°C (Max)
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FFSH1065B-F085

650V 10A SIC SBD GEN1.5

onsemi
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 11.5A (DC)
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: 421pF @ 1V, 100kHz
- Operating Temperature - Junction: -55°C ~ 175°C
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IDH15S120AKSA1

DIODE SCHOTTKY 1200V 15A TO220-2

Infineon Technologies
- Manufacturer: Infineon Technologies
- Series: CoolSiC™+
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 15A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 360µA @ 1200V
- Capacitance @ Vr, F: 750pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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P3D06016I2

DIODE SCHOTTKY 600V 16A TO220I-2

PN Junction Semiconductor
- Manufacturer: PN Junction Semiconductor
- Series: P3D
- Package / Case: TO-220I-2
- Supplier Device Package: TO-220I-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 28A (DC)
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 45 µA @ 650 V
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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CPW3-1700-S010B-WP

DIODE SILICON 1.7KV 10A CHIP

Cree/Wolfspeed
- Manufacturer: Cree/Wolfspeed
- Series: Z-Rec®
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1700V
- Capacitance @ Vr, F: 880pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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CSD08060A

DIODE SCHOTTKY 600V 12.5A TO220

Cree/Wolfspeed
- Manufacturer: Cree/Wolfspeed
- Series: Zero Recovery™
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 600V
- Capacitance @ Vr, F: 470pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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WNSC06650T6J

SILICON CARBIDE POWER DIODE

WeEn Semiconductors
- Manufacturer: WeEn Semiconductors
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 5-DFN (8x8)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: 190pF @ 1V, 1MHz
- Operating Temperature - Junction: 175°C (Max)
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JANTXV1N6912UTK2CS/TR

DIODE POWER SCHOTTKY

Microchip Technology
- Manufacturer: Microchip Technology
- Mounting Type: Surface Mount
- Package / Case: ThinKey™2
- Supplier Device Package: ThinKey™2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 640 mV @ 25 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1.2mA @ 45V
- Capacitance @ Vr, F: 1000pF @ 5V, 1MHz
- Operating Temperature - Junction: -65°C ~ 150°C
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PCFFS08120AF

DIODE SCHOTTKY 8A 1200V DIE

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.723 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Operating Temperature - Junction: 175°C (Max)
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CSD10030A

DIODE SCHOTTKY 300V 10A TO220-2

Wolfspeed, Inc.
- Manufacturer: Wolfspeed, Inc.
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 300V
- Capacitance @ Vr, F: 660pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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STPSC12065DY

DIODE SCHTKY 650V 12A TO220AC

STMicroelectronics
- Manufacturer: STMicroelectronics
- Series: Automotive, AEC-Q101, ECOPACK®2
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 750pF @ 0V, 1MHz
- Operating Temperature - Junction: -40°C ~ 175°C
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FFSM1065A

DIODE SBD 650V 4PQFN

onsemi
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: 4-PQFN (8x8)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 11A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 650V
- Capacitance @ Vr, F: 575pF @ 1V, 100kHz
- Operating Temperature - Junction: -55°C ~ 175°C
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