- Supplier Device Package
- Manufacturer
- Frequency Range
- Circuit
-
- Operating Temperature
- Topology
- Impedance
- Insertion Loss
- Isolation
- P1dB
- Test Frequency
- IIP3
- Series
| Partnumber | Description | Manufacturer
|
Package / Case
|
Supplier Device Package
|
RF Type
|
Frequency Range
|
Features
|
Circuit
|
Voltage - Supply
|
Operating Temperature
|
Impedance
|
Insertion Loss
|
Isolation
|
Test Frequency
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NJG1812ME4-TE1 | HIGH POWERDPDT SWITCH GAAS MMIC | Nisshinbo Micro Devices Inc. | 12-XFQFN Exposed Pad | 12-EQFN (2x2) | CDMA, GSM, LTE, UMTS | 3GHz | DC Blocked | DPDT | 2.4V ~ 5V | -40°C ~ 105°C | 50Ohm | 0.45dB | -17dB | 2.7GHz |
| NJG1817ME4-TE1 | 10W HIGH POWER SPDT SWITCH | Nisshinbo Micro Devices Inc. | 12-XFQFN Exposed Pad | 12-EQFN (2x2) | 5G | 500MHz ~ 6GHz | SPDT | 2.7V ~ 5V | -40°C ~ 105°C | 50Ohm | 0.45dB | 25dB | 6GHz | |
| NJG1812ME4-TE1 | HIGH POWERDPDT SWITCH GAAS MMIC | NJR Corporation/NJRC | 12-XFQFN Exposed Pad | 12-EQFN (2x2) | CDMA, GSM, LTE, UMTS | 3GHz | DC Blocked | DPDT | 2.4V ~ 5V | -40°C ~ 105°C | 50Ohm | 0.45dB | -17dB | 2.7GHz |
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