• Operating Temperature
    • Topology
    • Impedance
    • Insertion Loss
    • Isolation
    • P1dB
    • Test Frequency
    • IIP3
    • Series
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List Table
Found: 7
Partnumber Description Manufacturer
Package / Case
Supplier Device Package
RF Type
Frequency Range
Features
Circuit
Voltage - Supply
Operating Temperature
Impedance
Insertion Loss
Isolation
P1dB
Test Frequency
IIP3
NJG1801K75-TE1 SPDT SWITCH GAAS MMIC Nisshinbo Micro Devices Inc. 6-XFDFN Exposed Pad 6-DFN (1x1) 802.11a/b/g/n/ac 6GHz SPDT 1.8V ~ 5V -40°C ~ 105°C 50Ohm 0.45dB 28dB 31dBm 2.5GHz, 5.9GHz
NJG1815K75-TE1 SPDTSWITCH GAAS MMIC Nisshinbo Micro Devices Inc. 6-XFDFN Exposed Pad 6-DFN (1x1) 802.11a/b/g/n/ac/ax, WLAN 6GHz SPDT 2.5V ~ 5V -40°C ~ 105°C 50Ohm 0.45dB 25dB 31dBm 3.8GHz, 6GHz
NJG1806K75-TE1 SPDTSWITCH GAAS MMIC Nisshinbo Micro Devices Inc. 6-XFDFN Exposed Pad 6-DFN (1x1) 802.11a/b/g/n/ac/ax, LTE, WLAN 6GHz SPDT 2.5V ~ 5V -40°C ~ 105°C 50Ohm 0.4dB 25dB 31dBm 5.9GHz
NJG1804K64-TE1 SP3T SWITCH GAAS MMIC Nisshinbo Micro Devices Inc. 8-XFDFN Exposed Pad 8-DFN (1.5x1.5) 802.11a/b/g/n/ac, Bluetooth 6GHz SP3T 1.9V ~ 5V -40°C ~ 105°C 50Ohm 0.6dB 26dB -29dbm 5.9GHz
NJG1809ME7-TE1 HIGH POWERSP4T SWITCH GAAS MMIC Nisshinbo Micro Devices Inc. 18-XFQFN Exposed Pad 18-EQFN (2x2) 802.11a/b/g/n/ac, LTE, WLAN 6GHz DC Blocked SP4T 2.5V ~ 5V -40°C ~ 105°C 50Ohm 0.5dB 23dB 5.85GHz 60dBm
NJG1814MD7-TE1 HIGH POWER SPDT SWITCH GAAS MMIC Nisshinbo Micro Devices Inc. 14-XFQFN Exposed Pad 14-EQFN (1.6x1.6) 802.11a/b/g/n/ac, LTE 6GHz DC Blocked SPDT 2.5V ~ 5V -40°C ~ 105°C 50Ohm 0.45dB 27dB 5.85GHz 60dBm
NJG1681MD7-TE1 HIGH POWER SPDT SWITCH GAAS MMIC Nisshinbo Micro Devices Inc. 14-XFQFN Exposed Pad 14-EQFN (1.6x1.6) 802.11p, CDMA, GSM, LTE, UMTS 6GHz DC Blocked SPDT 2.375V ~ 5V -40°C ~ 105°C 50Ohm 0.45dB 20dB 6GHz 73dBm
  • 10
  • 15
  • 50
  • 100