- Мощность - Макс.
- Производитель
- Напряжение пробоя затвора (V(BR)GSS)
- Ток стока макс (Id)
- Тип корпуса
-
- Тип канала
- Напряжение сток-исток (Vdss)
- Входная емкость (Ciss) (Max) @ Vds
- Ток стока @ Vds (Vgs=0)
- Напряжение отсечки (VGS off) @ Id
- Сопротивление канала (On)
- Серия
Наименование | Описание | Производитель
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Package / Case
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Напряжение пробоя затвора (V(BR)GSS)
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Мощность - Макс.
|
Ток стока макс (Id)
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Вид монтажа
|
Рабочая температура
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Тип корпуса
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Тип канала
|
Напряжение сток-исток (Vdss)
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Входная емкость (Ciss) (Max) @ Vds
|
Ток стока @ Vds (Vgs=0)
|
Напряжение отсечки (VGS off) @ Id
|
Сопротивление канала (On)
|
Серия
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CMPF5485 TR | JFET N-CH 25V 10MA SOT23 | Central Semiconductor Corp | TO-236-3, SC-59, SOT-23-3 | 25V | 350mW | 30 mA | Surface Mount | -65°C ~ 150°C (TJ) | SOT-23 | N-Channel | 5pF @ 15V | 4mA @ 15V | 500mV @ 10nA | |||
PN5432 | SMALL SIGNAL N-CHANNEL MOSFET | Fairchild Semiconductor | TO-226-3, TO-92-3 (TO-226AA) | 25V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30pF @ 10V (VGS) | 150mA @ 15V | 4V @ 3nA | 5 Ohms | |||
PN4118 | SMALL SIGNAL N-CHANNEL MOSFET | Fairchild Semiconductor | TO-226-3, TO-92-3 (TO-226AA) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 3pF @ 10V | 80µA @ 10V | 1V @ 1nA | ||||
J309 TO-92 3L | WIDEBAND, HIGH GAIN, SINGLE, N- | Linear Integrated Systems, Inc. | TO-226-3, TO-92-3 (TO-226AA) | 25V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92 | N-Channel | 4pF @ 10V | 12mA @ 10V | 1V @ 1nA | 35 Ohms | J309 | ||
SST112 SOT-23 3L | N-CH JFET SWITCHES | Linear Integrated Systems, Inc. | TO-236-3, SC-59, SOT-23-3 | 35V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 12pF @ 10V | 50 Ohms | SST112 | ||||
SST309 SOT-23 3L | WIDEBAND, HIGH GAIN, SINGLE, N- | Linear Integrated Systems, Inc. | TO-236-3, SC-59, SOT-23-3 | 25V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 4pF @ 10V | 35 Ohms | SST309 | ||||
MMBF5458 | JFET N-CH 25V 350MW SOT23 | onsemi | TO-236-3, SC-59, SOT-23-3 | 25V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 7pF @ 15V | 2mA @ 15V | 1V @ 10nA | ||||
J270 | JFET P-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 2mA @ 15V | 500mV @ 1nA | |||||
J177_D27Z | JFET P-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 1.5mA @ 15V | 800mV @ 10nA | 300 Ohms | ||||
MMBF4093 | JFET N-CH 40V 350MW SOT23-3 | onsemi | TO-236-3, SC-59, SOT-23-3 | 40V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 16pF @ 20V | 8mA @ 20V | 1V @ 1nA | 80 Ohms | |||
MMBFJ201 | JFET N-CH 40V 350MW SOT23 | onsemi | TO-236-3, SC-59, SOT-23-3 | 40V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 200µA @ 20V | 300mV @ 10nA | |||||
PN4117 | JFET N-CH 40V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 3pF @ 10V | 30µA @ 10V | 600mV @ 1nA | ||||
J175_D75Z | JFET P-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 7mA @ 15V | 3V @ 10nA | 125 Ohms | ||||
SST5484-E3 | JFET P-CH 35V 1MA SOT-23 | Vishay Siliconix | TO-236-3, SC-59, SOT-23-3 | 25V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23 | N-Channel | 5pF @ 15V | 1mA @ 15V | 300mV @ 10nA | ||||
SST5462-T1-E3 | JFET P-CH 55V 4MA SOT-23 | Vishay Siliconix | TO-236-3, SC-59, SOT-23-3 | 40V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23 | P-Channel | 7pF @ 15V | 4mA @ 15V | 1.8V @ 1µA |
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