- Мощность - Макс.
- Производитель
- Напряжение пробоя затвора (V(BR)GSS)
- Ток стока макс (Id)
- Тип корпуса
-
- Тип канала
- Напряжение сток-исток (Vdss)
- Входная емкость (Ciss) (Max) @ Vds
- Ток стока @ Vds (Vgs=0)
- Напряжение отсечки (VGS off) @ Id
- Сопротивление канала (On)
- Серия
Наименование | Описание | Производитель
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Package / Case
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Напряжение пробоя затвора (V(BR)GSS)
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Мощность - Макс.
|
Ток стока макс (Id)
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Вид монтажа
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Рабочая температура
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Тип корпуса
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Тип канала
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Напряжение сток-исток (Vdss)
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Входная емкость (Ciss) (Max) @ Vds
|
Ток стока @ Vds (Vgs=0)
|
Напряжение отсечки (VGS off) @ Id
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Сопротивление канала (On)
|
Серия
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CMPF4416A TR | JFET N-CH 35V 10MA SOT23 | Central Semiconductor Corp | TO-236-3, SC-59, SOT-23-3 | 35V | 350mW | Surface Mount | -65°C ~ 150°C (TJ) | SOT-23 | N-Channel | 35V | 4.5pF @ 15V | 5mA @ 15V | 2.5V @ 1nA | |||
CMPF4393 TR PBFREE | JFET N-CH 40V 50MA SOT23 | Central Semiconductor Corp | TO-236-3, SC-59, SOT-23-3 | 40V | 350mW | Surface Mount | -65°C ~ 150°C (TJ) | SOT-23 | N-Channel | 40V | 14pF @ 20V | 5mA @ 20V | 500mV @ 1nA | 100 Ohms | ||
BSV79 | IC FET N-CH TO-18 | Central Semiconductor Corp | TO-206AA, TO-18-3 Metal Can | 350mW | Through Hole | -65°C ~ 175°C (TJ) | TO-18 | N-Channel | 40V | 5pF @ 10V | 20mA @ 15V | 2V @ 1nA | 40 Ohms | |||
TIS74 | SMALL SIGNAL N-CHANNEL MOSFET | Fairchild Semiconductor | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 18pF @ 10V (VGS) | 20mA @ 15V | 2V @ 4nA | 40 Ohms | |||
PN4392 TO-92 3L | LOW NOISE, N-CHANNEL JFET SWITCH | Linear Integrated Systems, Inc. | TO-226-3, TO-92-3 (TO-226AA) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92 | N-Channel | 16pF @ 20V | 60 Ohms | PN4392 | ||||
PN4393 TO-92 3L | LOW NOISE, N-CHANNEL JFET SWITCH | Linear Integrated Systems, Inc. | TO-226-3, TO-92-3 (TO-226AA) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92 | N-Channel | 16pF @ 20V | 100 Ohms | PN4393 | ||||
TIS75 | JFET N-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 18pF @ 10V (VGS) | 8mA @ 15V | 800mV @ 4nA | 60 Ohms | |||
J174_D27Z | JFET P-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 20mA @ 15V | 5V @ 10nA | 85 Ohms | ||||
PN4117A_J61Z | JFET N-CH 40V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 3pF @ 10V | 30µA @ 10V | 600mV @ 1nA | ||||
MPF4392G | JFET N-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 Long Body | 30V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92 (TO-226) | N-Channel | 30V | 10pF @ 15V (VGS) | 25mA @ 15V | 2V @ 10nA | 60 Ohms | ||
P1087_J18Z | JFET P-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 45pF @ 15V | 5mA @ 20V | 5V @ 1µA | 150 Ohms | |||
PN5434_D27Z | JFET N-CH 25V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 25V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30pF @ 10V (VGS) | 30mA @ 15V | 1V @ 3nA | 10 Ohms | |||
PN5434_D26Z | JFET N-CH 25V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 25V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30pF @ 10V (VGS) | 30mA @ 15V | 1V @ 3nA | 10 Ohms | |||
PN5434 | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 25V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30pF @ 10V (VGS) | 30mA @ 15V | 1V @ 3nA | 10 Ohms | |||
SST204-T1-E3 | JFET N-CH 25V 0.35W SOT-23 | Vishay Siliconix | TO-236-3, SC-59, SOT-23-3 | 25V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23 | N-Channel | 4.5pF @ 15V | 200µA @ 15V | 300mV @ 10nA |
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