- Мощность - Макс.
- Производитель
- Напряжение пробоя затвора (V(BR)GSS)
- Ток стока макс (Id)
- Тип корпуса
-
- Тип канала
- Напряжение сток-исток (Vdss)
- Входная емкость (Ciss) (Max) @ Vds
- Ток стока @ Vds (Vgs=0)
- Напряжение отсечки (VGS off) @ Id
- Сопротивление канала (On)
- Серия
Наименование | Описание | Производитель
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Package / Case
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Напряжение пробоя затвора (V(BR)GSS)
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Мощность - Макс.
|
Ток стока макс (Id)
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Вид монтажа
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Рабочая температура
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Тип корпуса
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Тип канала
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Напряжение сток-исток (Vdss)
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Входная емкость (Ciss) (Max) @ Vds
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Ток стока @ Vds (Vgs=0)
|
Напряжение отсечки (VGS off) @ Id
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Сопротивление канала (On)
|
Серия
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CMPF4392 TR PBFREE | JFET N-CH 40V 50MA SOT23 | Central Semiconductor Corp | TO-236-3, SC-59, SOT-23-3 | 40V | 350mW | Surface Mount | -65°C ~ 150°C (TJ) | SOT-23 | N-Channel | 40V | 14pF @ 20V | 25mA @ 20V | 2V @ 1nA | 60 Ohms | ||
SST310 SOT-23 3L | WIDEBAND, HIGH GAIN, SINGLE, N- | Linear Integrated Systems, Inc. | TO-236-3, SC-59, SOT-23-3 | 25V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 4pF @ 10V | 35 Ohms | SST310 | ||||
SST175 SOT-23 3L | P-CHANNEL, SINGLE, JFET SWITCH | Linear Integrated Systems, Inc. | TO-236-3, SC-59, SOT-23-3 | 30V | 350mW | Surface Mount | -55°C ~ 135°C (TJ) | SOT-23-3 | P-Channel | 125 Ohms | SST175 | |||||
J202 TO-92 3L | LOW NOISE, SINGLE, N-CHANNEL JFE | Linear Integrated Systems, Inc. | TO-226-3, TO-92-3 (TO-226AA) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92 | N-Channel | 4.5pF @ 15V | 900µA @ 20V | 800mV @ 10nA | J202 | |||
2N5461G | JFET P-CH 40V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 Long Body | 40V | 350mW | Through Hole | -65°C ~ 135°C (TJ) | TO-92 (TO-226) | P-Channel | 7pF @ 15V | 2mA @ 15V | 1V @ 1µA | ||||
2N5460G | JFET P-CH 40V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 Long Body | 40V | 350mW | Through Hole | -65°C ~ 135°C (TJ) | TO-92 (TO-226) | P-Channel | 7pF @ 15V | 1mA @ 15V | 750mV @ 1µA | ||||
PN4117A_D26Z | JFET N-CH 40V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 40V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 3pF @ 10V | 30µA @ 10V | 600mV @ 1nA | ||||
2N3820 | JFET P-CH 20V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 20V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 32pF @ 10V | 300µA @ 10V | 8V @ 10µA | ||||
MMBFJ112 | JFET N-CH 35V 0.35W SOT-23 | onsemi | TO-236-3, SC-59, SOT-23-3 | 35V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 5mA @ 15V | 1V @ 1µA | 50 Ohms | ||||
BF246A_J35Z | JFET N-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 30mA @ 15V | 600mV @ 100nA | |||||
P1086_D75Z | JFET P-CH 30V 0.35W TO92 | onsemi | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 45pF @ 15V | 10mA @ 20V | 10V @ 1µA | 75 Ohms | |||
MMBF4092 | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-236-3, SC-59, SOT-23-3 | 40V | 350mW | Surface Mount | -55°C ~ 150°C (TJ) | SOT-23-3 | N-Channel | 16pF @ 20V | 15mA @ 20V | 2V @ 1nA | 50 Ohms | |||
J270 | SMALL SIGNAL P-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) | 30V | 350mW | Through Hole | -55°C ~ 150°C (TJ) | TO-92-3 | P-Channel | 2mA @ 15V | 500mV @ 1nA | |||||
J111RL1G | SMALL SIGNAL N-CHANNEL MOSFET | Rochester Electronics, LLC | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 35V | 350mW | Through Hole | -65°C ~ 150°C (TJ) | TO-92-3 | N-Channel | 20mA @ 15V | 3V @ 1µA | 30 Ohms | ||||
SST4118-T1-E3 | JFET N-CH 70V 80UA SOT-23 | Vishay Siliconix | TO-236-3, SC-59, SOT-23-3 | 40V | 350mW | Surface Mount | -55°C ~ 175°C (TJ) | SOT-23 | N-Channel | 3pF @ 10V | 80µA @ 10V | 1V @ 1nA |
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