• 10
  • 15
  • 50
  • 100
Списком Таблицей
Найдено: 23
Наименование Описание Производитель
Package / Case
Напряжение пробоя затвора (V(BR)GSS)
Мощность - Макс.
Вид монтажа
Рабочая температура
Тип корпуса
Тип канала
Напряжение сток-исток (Vdss)
Входная емкость (Ciss) (Max) @ Vds
Ток стока @ Vds (Vgs=0)
Напряжение отсечки (VGS off) @ Id
Сопротивление канала (On)
2N5639 SMALL SIGNAL FET Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 35V 310mW Through Hole -65°C ~ 150°C (TJ) TO-92 (TO-226) N-Channel 30V 10pF @ 12V (VGS) 25mA @ 20V 60 Ohms
2N5638RLRAG JFET N-CH 35V 0.31W TO92 onsemi TO-226-3, TO-92-3 Long Body (Formed Leads) 35V 310mW Through Hole -65°C ~ 150°C (TJ) TO-92 (TO-226) N-Channel 30V 10pF @ 12V (VGS) 50mA @ 20V 30 Ohms
2N5458 JFET N-CH 25V 0.31W TO92 onsemi TO-226-3, TO-92-3 Long Body 25V 310mW Through Hole 135°C (TJ) TO-92 (TO-226) N-Channel 25V 7pF @ 15V 2mA @ 15V 1V @ 10nA
2N5638RLRA SMALL SIGNAL FET Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 35V 310mW Through Hole -65°C ~ 150°C (TJ) TO-92-3 N-Channel 30V 10pF @ 12V (VGS) 50mA @ 20V 30 Ohms
2N5639 SMALL SIGNAL FET Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 35V 310mW Through Hole -65°C ~ 150°C (TJ) TO-92-3 N-Channel 30V 10pF @ 12V (VGS) 25mA @ 20V 60 Ohms
J110RLRAG SMALL SIGNAL N-CHANNEL MOSFET Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 25V 310mW Through Hole 135°C (TJ) TO-92-3 N-Channel 10mA @ 15V 500mV @ 1µA 18 Ohms
2N5639G SMALL SIGNAL FET Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) 35V 310mW Through Hole -65°C ~ 150°C (TJ) TO-92-3 N-Channel 30V 10pF @ 12V (VGS) 25mA @ 20V 60 Ohms
2N5639RLRAG SMALL SIGNAL FET Rochester Electronics, LLC TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 35V 310mW Through Hole -65°C ~ 150°C (TJ) TO-92-3 N-Channel 30V 10pF @ 12V (VGS) 25mA @ 20V 60 Ohms
  • 10
  • 15
  • 50
  • 100