Найдено: 23
Наименование Описание Производитель
Package / Case
Напряжение пробоя затвора (V(BR)GSS)
Мощность - Макс.
Ток стока макс (Id)
Вид монтажа
Рабочая температура
Тип корпуса
Тип канала
Напряжение сток-исток (Vdss)
Входная емкость (Ciss) (Max) @ Vds
Ток стока @ Vds (Vgs=0)
Напряжение отсечки (VGS off) @ Id
Сопротивление канала (On)
FJZ594JCTF TRANSISTOR Fairchild Semiconductor SOT-623F 20V 100mW 1 mA Surface Mount 150°C (TJ) SOT-623F N-Channel 3.5pF @ 5V 150µA @ 5V 600mV @ 1µA
J270 SMALL SIGNAL P-CHANNEL MOSFET Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) 30V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 P-Channel 2mA @ 15V 500mV @ 1nA
MMBF4118 N-CHANNEL JFET Fairchild Semiconductor TO-236-3, SC-59, SOT-23-3 40V 225mW Surface Mount -55°C ~ 150°C (TJ) SOT-23-3 N-Channel 3pF @ 10V 80µA @ 10V 1V @ 1nA
J175 SMALL SIGNAL P-CHANNEL MOSFET Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) 30V 350mW Through Hole -65°C ~ 150°C (TJ) TO-92 P-Channel 5.5pF @ 10V (VGS) 7mA @ 15V 3V @ 10nA 125 Ohms
FJX597JHTF SMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor SC-70, SOT-323 20V 100mW 1 mA Surface Mount 150°C (TJ) SC-70-3 (SOT323) N-Channel 3.5pF @ 5V 150µA @ 5V 600mV @ 1µA
2N5639 SMALL SIGNAL FET Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 35V 310mW Through Hole -65°C ~ 150°C (TJ) TO-92 (TO-226) N-Channel 30V 10pF @ 12V (VGS) 25mA @ 20V 60 Ohms
MMBF4092 N-CHANNEL JFET Fairchild Semiconductor TO-236-3, SC-59, SOT-23-3 40V 350mW Surface Mount -55°C ~ 150°C (TJ) SOT-23-3 N-Channel 16pF @ 20V 15mA @ 20V 2V @ 1nA 50 Ohms
J176 SMALL SIGNAL P-CHANNEL MOSFET Fairchild Semiconductor TO-226-3, TO-92-3 (TO-226AA) 30V 350mW Through Hole -55°C ~ 150°C (TJ) TO-92-3 P-Channel 2mA @ 15V 1V @ 10nA 250 Ohms