- Тип корпуса
- Производитель
- Ток коллектора (макс)
- Граничное напряжение КЭ(макс)
- Тип транзистора
-
- Напряжение насыщения (макс) @ Ib, Ic
- Обратный ток коллектора
- Усиление по току (hFE)
- Граничная частота
- Резистор эмиттер-база (R2)
- Package / Case
- Серия
| Наименование | Описание | Производитель
|
Ток коллектора (макс)
|
Граничное напряжение КЭ(макс)
|
Мощность - Макс.
|
Вид монтажа
|
Тип транзистора
|
Тип корпуса
|
Резистор базы (R1)
|
Напряжение насыщения (макс) @ Ib, Ic
|
Обратный ток коллектора
|
Усиление по току (hFE)
|
Граничная частота
|
Резистор эмиттер-база (R2)
|
Package / Case
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RN1963FE(TE85L,F) | TRANS 2NPN PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | ES6 | 22kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 70 @ 10mA, 5V | 250MHz | 22kOhms | SOT-563, SOT-666 | |
| RN2903FE,LXHF(CT | AUTO AEC-Q 2-IN-1 (POINT-SYMMETR | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | ES6 | 22kOhms | 300mV @ 250µA, 5mA | 500nA | 70 @ 10mA, 5V | 200MHz | 22kOhms | SOT-563, SOT-666 | Automotive, AEC-Q101 |
| RN4905FE,LXHF(CT | AUTO AEC-Q 2-IN-1 (POINT-SYMMETR | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 1 NPN, 1 PNP - Pre-Biased (Dual) | ES6 | 2.2kOhms | 300mV @ 250µA, 5mA | 500nA | 80 @ 10mA, 5V | 200MHz, 250MHz | 47kOhms | SOT-563, SOT-666 | Automotive, AEC-Q101 |
| RN4991FE,LXHF(CT | AUTO AEC-Q TR NPN + PNP Q1BSR=10 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 1 NPN, 1 PNP - Pre-Biased (Dual) | ES6 | 10kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 250MHz, 200MHz | SOT-563, SOT-666 | Automotive, AEC-Q101 | |
| RN1911FE,LF(CT | NPN X 2 BRT Q1BSR=10KOHM Q1BER=I | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | ES6 | 10kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 120 @ 1mA, 5V | 250MHz | SOT-563, SOT-666 | ||
| RN1966FE(TE85L,F) | TRANS 2NPN PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 NPN - Pre-Biased (Dual) | ES6 | 4.7kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 250MHz | 47kOhms | SOT-563, SOT-666 | |
| RN2964FE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | ES6 | 47kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 200MHz | 47kOhms | SOT-563, SOT-666 | |
| RN2903FE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | ES6 | 22kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 70 @ 10mA, 5V | 200MHz | 22kOhms | SOT-563, SOT-666 | |
| RN2965FE(TE85L,F) | TRANS 2PNP PREBIAS 0.1W ES6 | Toshiba Semiconductor and Storage | 100mA | 50V | 100mW | Surface Mount | 2 PNP - Pre-Biased (Dual) | ES6 | 2.2kOhms | 300mV @ 250µA, 5mA | 100nA (ICBO) | 80 @ 10mA, 5V | 200MHz | 47kOhms | SOT-563, SOT-666 |
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