Найдено: 20
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
CBR1F-D060 BRIDGE RECT 1PHASE 600V 1A 4DIP Central Semiconductor Corp 4-EDIP (0.300", 7.62mm) 600V 1A Single Phase Through Hole 4-DIP Standard -65°C ~ 150°C (TJ) 10µA @ 600V 1.3V @ 1A
CBR1F-D010 BRIDGE RECT 1PHASE 100V 1A 4DIP Central Semiconductor Corp 4-EDIP (0.300", 7.62mm) 100V 1A Single Phase Through Hole 4-DIP Standard -65°C ~ 150°C (TJ) 10µA @ 100V 1.3V @ 1A
DF01M BRIDGE RECT 1P 100V 1.5A 4DIP onsemi 4-EDIP (0.300", 7.62mm) 100V 1.5A Single Phase Through Hole 4-DIP Standard -55°C ~ 150°C (TJ) 10µA @ 100V 1.1V @ 1A
DI108_T0_00001 DIP, GENERAL Panjit International Inc. 4-EDIP (0.300", 7.62mm) 800V 1A Single Phase Through Hole 4-DIP Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.1V @ 1A
DI1510_T0_00001 DIP, GENERAL Panjit International Inc. 4-EDIP (0.300", 7.62mm) 1kV 1.5A Single Phase Through Hole 4-DIP Standard -55°C ~ 125°C (TJ) 5µA @ 1000V 1.1V @ 1A