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Списком Таблицей
Найдено: 56
Наименование Описание Производитель
Package / Case
Обратное пиковое напряжение
Средний выпрямленный ток (Io)
Тип диода
Вид монтажа
Тип корпуса
Технология
Рабочая температура
Ток утечки
Прямое напряжение
GBPC1202W BRIDGE RECTIFIER DIODE, 1 PHASE, Fairchild Semiconductor 4-Square, GBPC-W 200V 12A Single Phase Through Hole GBPC-W Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1.1V @ 6A
GBPC1202 BRIDGE RECTIFIER DIODE, 1 PHASE, Fairchild Semiconductor 4-Square, GBPC 200V 12A Single Phase QC Terminal GBPC Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1.1V @ 6A
GBPC1202 BRIDGE RECT 1PHASE 200V 12A GBPC onsemi 4-Square, GBPC 200V 12A Single Phase QC Terminal GBPC Standard -55°C ~ 150°C (TJ) 5µA @ 200V 1.1V @ 6A
GBPC12005W BRIDGE RECT 1P 50V 12A GBPC-W onsemi 4-Square, GBPC-W 50V 12A Single Phase Through Hole GBPC-W Standard -55°C ~ 150°C (TJ) 5µA @ 50V 1.1V @ 6A
GBPC12005 BRIDGE RECT 1PHASE 50V 12A GBPC onsemi 4-Square, GBPC 50V 12A Single Phase QC Terminal GBPC Standard -55°C ~ 150°C (TJ) 5µA @ 50V 1.1V @ 6A
B412F-2T BRIDGE RECT 1P 1.2KV 12A MODULE Sensata-Crydom Module 1.2kV 12A Single Phase QC Terminal Module Standard 1.25V @ 35A
BU1206-M3/51 BRIDGE RECT 1P 600V 12A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 600V 12A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.05V @ 6A
GBPC1210W-E4/51 BRIDGE RECT 1P 1KV 12A GBPC-W Vishay General Semiconductor - Diodes Division 4-Square, GBPC-W 1kV 12A Single Phase Through Hole GBPC-W Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.1V @ 6A
GBPC1206-E3/51 BRIDGE RECT 1PHASE 600V 12A GBPC Vishay General Semiconductor - Diodes Division 4-Square, GBPC 600V 12A Single Phase QC Terminal GBPC Standard -55°C ~ 150°C (TJ) 5µA @ 600V 1.1V @ 6A
GBPC12005W-E4/51 BRIDGE RECT 1P 50V 12A GBPC-W Vishay General Semiconductor - Diodes Division 4-Square, GBPC-W 50V 12A Single Phase Through Hole GBPC-W Standard -55°C ~ 150°C (TJ) 5µA @ 50V 1.1V @ 6A
BU12085S-M3/45 BRIDGE RECT 1P 800V 12A BU-5S Vishay General Semiconductor - Diodes Division 4-SIP, BU-5S 800V 12A Single Phase Through Hole isoCINK+™ BU-5S Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.05V @ 6A
BU1210-M3/51 BRIDGE RECT 1P 1KV 12A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 1kV 12A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.05V @ 6A
BU1210-M3/45 BRIDGE RECT 1P 1KV 12A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 1kV 12A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 1000V 1.05V @ 6A
BU1208-M3/45 BRIDGE RECT 1P 800V 12A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 800V 12A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.05V @ 6A
BU1208-M3/51 BRIDGE RECT 1P 800V 12A BU Vishay General Semiconductor - Diodes Division 4-SIP, BU 800V 12A Single Phase Through Hole isoCINK+™ BU Standard -55°C ~ 150°C (TJ) 5µA @ 800V 1.05V @ 6A
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