- Производитель
- Тип корпуса
- Диапазон частот
- Тип переключателя
-
- Рабочая температура
- Топология
- Импеданс
- Вносимые потери
- Изоляция каналов
- P1dB
- Частота теста
- IIP3
- Серия
| Наименование | Описание | Производитель
|
Package / Case
|
Тип корпуса
|
Тип радиосигнала
|
Диапазон частот
|
Features
|
Тип переключателя
|
Напряжение питания
|
Рабочая температура
|
Топология
|
Импеданс
|
Вносимые потери
|
Изоляция каналов
|
P1dB
|
Частота теста
|
IIP3
|
Серия
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NJG1524APC1-TE1# | IC RF SWITCH DPDT 3GHZ 16FFP-C1 | Nisshinbo Micro Devices Inc. | 16-FFP | 16-FFP-C1 (2.5x2.5) | GSM | 50MHz ~ 3GHz | DPDT | -40°C ~ 85°C | Reflective | 50Ohm | 0.5dB | 27dB | 23dBm | 2GHz | ||||
| NJG1524APC1-TE1 | IC RF SWITCH DPDT 3GHZ 16FFP-C1 | Nisshinbo Micro Devices Inc. | 16-FFP | 16-FFP-C1 (2.5x2.5) | GSM | 50MHz ~ 3GHz | DPDT | -40°C ~ 85°C | Reflective | 50Ohm | 0.5dB | 27dB | 23dBm | 2GHz | ||||
| NJG1505R-TE1 | IC RF SWITCH SPDT 3GHZ 8VSP | Nisshinbo Micro Devices Inc. | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-VSP | General Purpose | 1MHz ~ 3GHz | SPDT | 2.5V ~ 5.5V | -30°C ~ 85°C | Reflective | 50Ohm | 0.8dB | -37dB | -22dBm | 2GHz | |||
| NJG1522KB2-TE1 | IC RF SWITCH SPDT 3GHZ 6FLP-B2 | Nisshinbo Micro Devices Inc. | 6-SMD, Flat Leads | 6-FLP-B2 | GSM | 50MHz ~ 3GHz | SPDT | -30°C ~ 85°C | Absorptive | 50Ohm | 0.5dB | 27dB | 24dBm | 2GHz | ||||
| NJG1522KB2-TE1# | IC RF SWITCH SPDT 3GHZ 6FLP-B2 | Nisshinbo Micro Devices Inc. | 6-SMD, Flat Leads | 6-FLP-B2 | GSM | 50MHz ~ 3GHz | SPDT | -30°C ~ 85°C | Absorptive | 50Ohm | 0.5dB | 27dB | 24dBm | 2GHz | ||||
| NJG1684ME2-TE1 | HIGH POWER SP4T SWITCH GAAS MMIC | Nisshinbo Micro Devices Inc. | 12-XFQFN Exposed Pad | 12-EQFN (1.8x1.8) | CDMA, GSM, LTE, UMTS | 2.7GHz | DC Blocked | SP4T | 2.375V ~ 5V | -40°C ~ 85°C | 50Ohm | 0.35dB | 25dB | 2.7GHz | 70dBm | |||
| NJG1812ME4-TE1 | HIGH POWERDPDT SWITCH GAAS MMIC | Nisshinbo Micro Devices Inc. | 12-XFQFN Exposed Pad | 12-EQFN (2x2) | CDMA, GSM, LTE, UMTS | 3GHz | DC Blocked | DPDT | 2.4V ~ 5V | -40°C ~ 105°C | 50Ohm | 0.45dB | -17dB | 2.7GHz | ||||
| NJG1816K75-TE1 | ULTRA LOW CURRENT CONSUMPTION SP | Nisshinbo Micro Devices Inc. | 6-XFDFN Exposed Pad | 6-DFN (1x1) | SIGFOX, LoRaWAN, Wi-SUN | 50MHz ~ 3GHz | SPDT | 1.6V ~ 4V | -40°C ~ 105°C | 50Ohm | 0.45dB | 30dB | 920MHz | |||||
| NJG1512V-TE1# | IC RF SWITCH SPDT 3GHZ 14SSOP | Nisshinbo Micro Devices Inc. | 14-TSSOP (0.173", 4.40mm Width) | 14-SSOP | GSM | 1MHz ~ 3GHz | SPDT | 2.5V ~ 5.5V | -20°C ~ 85°C | Reflective | 50Ohm | 0.8dB | -46dB | -22dBm | 2GHz | |||
| NJG1528KC1-TE3 | IC RF SWITCH DPDT 2.5GHZ 10FLP | Nisshinbo Micro Devices Inc. | 10-SMD, Flat Lead | 10-FLP | Cellular, AMPS, GSM, CDMA, TDMA | 0Hz ~ 2.5GHz | DPDT | -40°C ~ 85°C | Reflective | 50Ohm | 0.7dB | 18dB | 1.9GHz | 60dBm | ||||
| NJG1516R-TE1 | IC RF SWITCH SPDT 3GHZ 8VSP | Nisshinbo Micro Devices Inc. | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-VSP | GSM | 1MHz ~ 3GHz | SPDT | -40°C ~ 85°C | Absorptive | 50Ohm | 0.55dB | 25dB | 2GHz | 62dBm | ||||
| NJG1602HE3-TE1 | IC RF SWITCH DPDT 3GHZ 12USB | Nisshinbo Micro Devices Inc. | 12-WFQFN Exposed Pad | 12-USB (2.35x2.35) | Cellular, CDMA, GPS, PCS | 100MHz ~ 3GHz | DPDT | 2.7V ~ 5.5V | -40°C ~ 85°C | Reflective | 50Ohm | 0.55dB | -15dB | 1.9GHz | 62dBm | |||
| NJG1617HE3-TE1 | IC RF SWITCH DPDT 6GHZ 12USB | Nisshinbo Micro Devices Inc. | 12-WFQFN Exposed Pad | 12-USB (2.35x2.35) | 802.11b/g | 100MHz ~ 6GHz | DPDT | 2.7V ~ 5.5V | -40°C ~ 85°C | Reflective | 50Ohm | 0.75dB | 25dB | 6GHz | ||||
| NJG1519KC1-TE3# | IC RF SWITCH SP4T 2.5GHZ 10FLP | Nisshinbo Micro Devices Inc. | 10-SMD, Flat Lead | 10-FLP | GSM | 0Hz ~ 2.5GHz | SP4T | -40°C ~ 85°C | Absorptive | 50Ohm | 0.8dB | 18dB | 1.9GHz | |||||
| NJG1617K11-TE1 | IC RF SWITCH DPDT 6GHZ 12QFN | Nisshinbo Micro Devices Inc. | 12-WFQFN Exposed Pad | 12-QFN (3x3) | 802.11b/g | 100MHz ~ 6GHz | DPDT | 2.7V ~ 5.5V | -40°C ~ 85°C | Reflective | 50Ohm | 0.75dB | 25dB | 6GHz |
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