• Manufacturer: Microsemi Corporation

• Manufacturer: CEL
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89
• Power - Max: 1.2W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
• Frequency - Transition: 6.5GHz
• Gain: 12dB
• Noise Figure (dB Typ @ f): 1.1dB @ 1GHz

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
• Frequency - Transition: 42GHz
• Gain: 11dB ~ 21.5dB
• Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz

• Manufacturer: CEL
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323
• Power - Max: 150mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 65mA
• Voltage - Collector Emitter Breakdown (Max): 10V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
• Frequency - Transition: 7GHz
• Gain: 9dB
• Noise Figure (dB Typ @ f): 1.4dB @ 1GHz

• Manufacturer: Rochester Electronics, LLC

• Manufacturer: Central Semiconductor Corp
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: Die
• Supplier Device Package: Die
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Frequency - Transition: 600MHz

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-3D
• Power - Max: 75mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 25mA
• Voltage - Collector Emitter Breakdown (Max): 5V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
• Frequency - Transition: 25GHz
• Gain: 23dB
• Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 Short Body
• Supplier Device Package: TO-92S
• Power - Max: 250mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 20mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
• Frequency - Transition: 600MHz
• Gain: 18dB ~ 22dB
• Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-CP
• Power - Max: 200mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 70mA
• Voltage - Collector Emitter Breakdown (Max): 10V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Frequency - Transition: 4.5GHz
• Gain: 9.5dB
• Noise Figure (dB Typ @ f): 1.9dB @ 1GHz

• Manufacturer: Central Semiconductor Corp
• Mounting Type: Surface Mount
• Operating Temperature: -65°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Power - Max: 350mW
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
• Frequency - Transition: 650MHz

• Manufacturer: Intersil
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC
• Power - Max: 150mW
• Transistor Type: 3 NPN + 2 PNP
• Current - Collector (Ic) (Max): 65mA
• Voltage - Collector Emitter Breakdown (Max): 12V, 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
• Frequency - Transition: 8GHz, 5.5GHz
• Noise Figure (dB Typ @ f): 3.5dB @ 1GHz

• Manufacturer: CEL
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363
• Power - Max: 200mW
• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
• Frequency - Transition: 4.5GHz
• Noise Figure (dB Typ @ f): 1.2dB @ 1GHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4
• Power - Max: 450mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 65mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
• Frequency - Transition: 8GHz
• Gain: 22dB
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

• Manufacturer: Toshiba Semiconductor and Storage
• Mounting Type: Surface Mount
• Operating Temperature: 125°C (TJ)
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: USQ
• Power - Max: 100mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
• Frequency - Transition: 7GHz
• Gain: 18dB
• Noise Figure (dB Typ @ f): 1dB @ 500MHz