• Manufacturer: Microsemi Corporation
• Mounting Type: Chassis Mount
• Operating Temperature: 200°C
• Package / Case: 55AW
• Supplier Device Package: 55AW
• Power - Max: 58W
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 160mA, 5V
• Frequency - Transition: 2.3GHz ~ 2.4GHz
• Gain: 7dB

• Manufacturer: STMicroelectronics
• Mounting Type: Chassis, Stud Mount
• Operating Temperature: 200°C (TJ)
• Package / Case: M122
• Supplier Device Package: M122
• Power - Max: 58W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2.5A
• Voltage - Collector Emitter Breakdown (Max): 16V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
• Gain: 7dB

• Manufacturer: NXP USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SOT-343F
• Supplier Device Package: 4-DFP
• Power - Max: 136mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10mA
• Voltage - Collector Emitter Breakdown (Max): 5.5V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 2V
• Frequency - Transition: 15GHz
• Gain: 13.5dB ~ 23.5dB
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz

• Manufacturer: Rochester Electronics, LLC
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-101, SOT-883
• Supplier Device Package: PG-TSLP-3
• Power - Max: 360mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 90mA
• Voltage - Collector Emitter Breakdown (Max): 4.7V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
• Frequency - Transition: 37GHz
• Gain: 21dB
• Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23
• Power - Max: 280mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 25mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
• Frequency - Transition: 1.4GHz
• Noise Figure (dB Typ @ f): 3.5dB @ 800MHz

• Manufacturer: CEL
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: 3-SuperMiniMold (19)
• Power - Max: 100mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 60mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
• Frequency - Transition: 5GHz

• Manufacturer: onsemi
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)
• Power - Max: 225mW
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
• Frequency - Transition: 800MHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3
• Power - Max: 350mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Frequency - Transition: 600MHz

• Manufacturer: Microsemi Corporation

• Manufacturer: NXP USA Inc.

• Manufacturer: Microsemi Corporation

• Manufacturer: Infineon Technologies

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323
• Power - Max: 580mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Frequency - Transition: 8GHz
• Gain: 10.5dB ~ 16dB
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-101, SOT-883
• Supplier Device Package: PG-TSLP-3-1
• Power - Max: 580mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Frequency - Transition: 8GHz
• Gain: 12.5dB ~ 19dB
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

• Manufacturer: Sanyo
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-CP
• Power - Max: 250mW
• Transistor Type: PNP
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Frequency - Transition: 1.2GHz
• Gain: 13dB
• Noise Figure (dB Typ @ f): 2.5dB @ 400MHz