- Manufacturer
- Frequency
-
- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: 16-VFQFN Exposed Pad
- Supplier Device Package: 16-QFN (3x3)
- Power - Max: 150mW
- Transistor Type: 5 NPN
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
- Frequency - Transition: 10GHz
- Gain: 9.4dB
- Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
- Frequency - Transition: 150MHz
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-3D
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
- Frequency - Transition: 46GHz
- Gain: 24dB
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
-
- Manufacturer: Broadcom Limited
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-86
- Supplier Device Package: 86 Plastic
- Power - Max: 500mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
- Frequency - Transition: 8GHz
- Gain: 9dB ~ 13dB
- Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4L2MM, M14
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 4.3V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 6mA, 2V
- Gain: 7.5dB ~ 16dB
- Noise Figure (dB Typ @ f): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Frequency - Transition: 9GHz
- Gain: 13dB
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Frequency - Transition: 7GHz
- Gain: 14.2dB
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: SOT-143R
- Supplier Device Package: SOT-143R
- Power - Max: 60mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10mA
- Voltage - Collector Emitter Breakdown (Max): 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
- Frequency - Transition: 14GHz
- Gain: 18dB
- Noise Figure (dB Typ @ f): 1dB @ 2GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-143R
- Supplier Device Package: SOT-143R
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
- Frequency - Transition: 9GHz
- Gain: 13.5dB
- Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Frequency - Transition: 6.5GHz
- Gain: 13dB
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
- Power - Max: 250mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 8V
- Frequency - Transition: 8GHz
- Gain: 20dB
- Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-SSFP
- Power - Max: 120mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
- Frequency - Transition: 14GHz
- Gain: 9dB ~ 10.5dB
- Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
-
- Manufacturer: Renesas Electronics America Inc
- Mounting Type: Surface Mount
- Operating Temperature: 175°C (TJ)
- Package / Case: 16-VFQFN Exposed Pad
- Supplier Device Package: 16-QFN (3x3)
- Power - Max: 150mW
- Transistor Type: 5 PNP
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
- Frequency - Transition: 5.5GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
- Frequency - Transition: 9GHz
- Gain: 13dB
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
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