• Manufacturer: NXP USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 175°C (TJ)
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B
• Power - Max: 300mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 70mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz

• Manufacturer: STMicroelectronics
• Mounting Type: Surface Mount
• Operating Temperature: 200°C (TJ)
• Package / Case: M174
• Supplier Device Package: M174
• Power - Max: 270W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 20A
• Voltage - Collector Emitter Breakdown (Max): 18V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
• Gain: 13dB

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75
• Power - Max: 175mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 20mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 8V
• Frequency - Transition: 8GHz
• Gain: 19.5dB
• Noise Figure (dB Typ @ f): 1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz

• Manufacturer: NXP USA Inc.
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SOT-343 Reverse Pinning
• Supplier Device Package: 4-SO
• Power - Max: 135mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V
• Frequency - Transition: 25GHz
• Gain: 23dB
• Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz

• Manufacturer: Microsemi Corporation
• Mounting Type: Chassis Mount
• Operating Temperature: 200°C (TJ)
• Package / Case: M113
• Supplier Device Package: M113
• Power - Max: 80W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4.5A
• Voltage - Collector Emitter Breakdown (Max): 36V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
• Frequency - Transition: 30MHz
• Gain: 18dB

• Manufacturer: Broadcom Limited
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: 4-SMD (85 Plastic)
• Supplier Device Package: 85 Plastic
• Power - Max: 500mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
• Frequency - Transition: 8GHz
• Gain: 9.5dB ~ 13.5dB
• Noise Figure (dB Typ @ f): 2dB ~ 3.5dB @ 2GHz ~ 4GHz

• Manufacturer: onsemi
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3
• Power - Max: 350mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
• Gain: 15dB
• Noise Figure (dB Typ @ f): 6dB @ 60MHz

• Manufacturer: Microsemi Corporation
• Mounting Type: Chassis, Stud Mount
• Operating Temperature: 200°C (TJ)
• Package / Case: 55FT
• Supplier Device Package: 55FT
• Power - Max: 8W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 750mA
• Voltage - Collector Emitter Breakdown (Max): 24V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
• Frequency - Transition: 470MHz ~ 860MHz
• Gain: 11dB

• Manufacturer: CEL
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SOT-523
• Supplier Device Package: SOT-523
• Power - Max: 125mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 6V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
• Frequency - Transition: 12GHz
• Gain: 8.5dB
• Noise Figure (dB Typ @ f): 1.5dB @ 2GHz

• Manufacturer: Fairchild Semiconductor
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Power - Max: 150mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
• Frequency - Transition: 850MHz
• Gain: 15dB ~ 23dB
• Noise Figure (dB Typ @ f): 6.5dB @ 200MHz

• Manufacturer: Microsemi Corporation
• Series: Military, MIL-PRF-19500/343
• Mounting Type: Through Hole
• Operating Temperature: -65°C ~ 200°C (TJ)
• Package / Case: TO-72-3 Metal Can
• Supplier Device Package: TO-72
• Power - Max: 200mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 40mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
• Frequency - Transition: 500MHz
• Gain: 12.5dB ~ 21dB @ 450MHz
• Noise Figure (dB Typ @ f): 4.5dB @ 450MHz

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-101, SOT-883
• Supplier Device Package: PG-TSLP-3-1
• Power - Max: 250mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 10V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
• Frequency - Transition: 9GHz
• Gain: 21.5dB
• Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz

• Manufacturer: Infineon Technologies
• Mounting Type: Surface Mount
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4
• Power - Max: 185mW
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 2.8V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Frequency - Transition: 65GHz
• Gain: 21.5dB
• Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz

• Manufacturer: Microsemi Corporation
• Mounting Type: Chassis Mount
• Operating Temperature: 200°C (TJ)
• Package / Case: 55AW
• Supplier Device Package: 55AW
• Power - Max: 500W
• Transistor Type: NPN
• Current - Collector (Ic) (Max): 12A
• Voltage - Collector Emitter Breakdown (Max): 70V
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
• Frequency - Transition: 1.03GHz ~ 1.09GHz
• Gain: 9.5dB

• Manufacturer: Microsemi Corporation