- Manufacturer
- Frequency
-
- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Through Hole
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 250mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
-
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: 55CX
- Supplier Device Package: 55CX
- Power - Max: 290W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 9A
- Voltage - Collector Emitter Breakdown (Max): 55V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 20mA, 5V
- Frequency - Transition: 1.03GHz ~ 1.09GHz
- Gain: 8dB ~ 9dB
-
- Manufacturer: MACOM Technology Solutions
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: 376B-02
- Supplier Device Package: 376B-02, Style 1
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 14A
- Voltage - Collector Emitter Breakdown (Max): 65V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Gain: 10dB
-
- Manufacturer: Broadcom Limited
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
- Power - Max: 225mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Gain: 11dB ~ 15.5dB
- Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
- Power - Max: 160mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
- Frequency - Transition: 42GHz
- Gain: 27dB
- Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
-
- Manufacturer: Ampleon USA Inc.
- Mounting Type: Chassis Mount
- Package / Case: SOT-443A
- Supplier Device Package: CDFM2
- Power - Max: 150W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.215GHz
- Gain: 8dB
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-343F
- Supplier Device Package: SOT-343F
- Power - Max: 735mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
- Frequency - Transition: 20GHz
- Gain: 12dB
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4-2
- Power - Max: 160mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
- Frequency - Transition: 42GHz
- Gain: 27dB
- Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
-
- Manufacturer: Renesas Electronics America Inc
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
- Frequency - Transition: 7GHz
- Gain: 12dB
- Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-523
- Power - Max: 125mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
- Frequency - Transition: 7GHz
- Gain: 12dB
- Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Frequency - Transition: 6.5GHz
- Gain: 13dB
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
-
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-75, SOT-416
- Supplier Device Package: 3-SMCP
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
- Frequency - Transition: 7GHz
- Gain: 12dB
- Noise Figure (dB Typ @ f): 1dB @ 1GHz
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Frequency - Transition: 6.5GHz
- Gain: 12dB
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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