- Manufacturer
- Frequency
-
- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
-
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: 3-CPH
- Power - Max: 600mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
- Frequency - Transition: 400MHz
-
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 350mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
- Frequency - Transition: 900MHz
- Gain: 15dB
- Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
-
- Manufacturer: Rochester Electronics, LLC
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 250mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
- Gain: 7.2dB
- Noise Figure (dB Typ @ f): 2dB @ 1GHz
-
- Manufacturer: Renesas Electronics America Inc
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 35mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
- Frequency - Transition: 10GHz
- Gain: 12dB
- Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
-
- Manufacturer: Microsemi Corporation
- Mounting Type: Through Hole
- Operating Temperature: 200°C (TJ)
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
- Power - Max: 7.8W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 16V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Frequency - Transition: 470MHz
- Gain: 9.5dB
-
- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Power - Max: 1.8W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Frequency - Transition: 6GHz
- Gain: 10dB
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
-
- Manufacturer: Renesas Electronics America Inc
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
- Power - Max: 150mW
- Transistor Type: 3 NPN + 2 PNP
- Current - Collector (Ic) (Max): 65mA
- Voltage - Collector Emitter Breakdown (Max): 12V, 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
- Frequency - Transition: 8GHz, 5.5GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
- Power - Max: 185mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 2.8V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
- Frequency - Transition: 65GHz
- Gain: 21dB ~ 10dB
- Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
-
- Manufacturer: Diodes Incorporated
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 330mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 11V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
- Frequency - Transition: 3.2GHz
-
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: M105
- Supplier Device Package: M105
- Power - Max: 87.5W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Gain: 10dB
-
- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-SSFP
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
- Frequency - Transition: 320MHz
- Noise Figure (dB Typ @ f): 3dB @ 100MHz
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Power - Max: 175mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
- Frequency - Transition: 8GHz
- Gain: 19dB
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
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