- Manufacturer
- Frequency
-
- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
-
- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Power - Max: 280mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 25mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
- Frequency - Transition: 1.4GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
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- Manufacturer: CEL
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: 3-SuperMiniMold (19)
- Power - Max: 100mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 60mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Frequency - Transition: 5GHz
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- Manufacturer: onsemi
- Mounting Type: Surface Mount
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Power - Max: 225mW
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
- Frequency - Transition: 800MHz
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Power - Max: 350mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Frequency - Transition: 600MHz
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- Manufacturer: Microsemi Corporation
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- Manufacturer: NXP USA Inc.
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- Manufacturer: Microsemi Corporation
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- Manufacturer: Infineon Technologies
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
- Power - Max: 580mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Frequency - Transition: 8GHz
- Gain: 10.5dB ~ 16dB
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3-1
- Power - Max: 580mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Frequency - Transition: 8GHz
- Gain: 12.5dB ~ 19dB
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
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- Manufacturer: Microsemi Corporation
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
- Frequency: 40.68MHz
- Voltage - Rated: 1000V
- Power - Output: 150W
- Transistor Type: N-Channel
- Gain: 16dB
- Voltage - Test: 150V
- Current Rating (Amps): 13A
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- Manufacturer: Sanyo
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
- Power - Max: 250mW
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Frequency - Transition: 1.2GHz
- Gain: 13dB
- Noise Figure (dB Typ @ f): 2.5dB @ 400MHz
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- Manufacturer: Microsemi Corporation
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- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
- Power - Max: 1.2W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Frequency - Transition: 6.5GHz
- Gain: 12dB
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
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- Manufacturer: Rochester Electronics, LLC
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- 10
- 15
- 50
- 100