- Manufacturer
- Frequency
-
- Current Rating (Amps)
- Transistor Type
- Operating Temperature
- Supplier Device Package
- Power - Output
- DC Current Gain (hFE) (Min) @ Ic, Vce
- Frequency - Transition
- Gain
- Noise Figure
- Voltage - Test
- Current - Test
- Noise Figure (dB Typ @ f)
- Series
-
- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: M113
- Supplier Device Package: M113
- Power - Max: 80W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4.5A
- Voltage - Collector Emitter Breakdown (Max): 36V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
- Frequency - Transition: 30MHz
- Gain: 18dB
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- Manufacturer: Broadcom Limited
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: 4-SMD (85 Plastic)
- Supplier Device Package: 85 Plastic
- Power - Max: 500mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
- Frequency - Transition: 8GHz
- Gain: 9.5dB ~ 13.5dB
- Noise Figure (dB Typ @ f): 2dB ~ 3.5dB @ 2GHz ~ 4GHz
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- Manufacturer: Rochester Electronics, LLC
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
- Frequency: 800MHz
- Voltage - Rated: 7V
- Current - Test: 15mA
- Transistor Type: N-Channel Dual Gate
- Voltage - Test: 5V
- Noise Figure: 2dB
- Current Rating (Amps): 40mA
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- Manufacturer: Ampleon USA Inc.
- Package / Case: SOT-608A
- Supplier Device Package: CDFM2
- Frequency: 2.11GHz ~ 2.17GHz
- Voltage - Rated: 65V
- Current - Test: 405mA
- Power - Output: 2.5W
- Transistor Type: LDMOS
- Gain: 18.5dB
- Voltage - Test: 28V
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- Manufacturer: onsemi
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Power - Max: 350mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
- Gain: 15dB
- Noise Figure (dB Typ @ f): 6dB @ 60MHz
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis, Stud Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: 55FT
- Supplier Device Package: 55FT
- Power - Max: 8W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 750mA
- Voltage - Collector Emitter Breakdown (Max): 24V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Frequency - Transition: 470MHz ~ 860MHz
- Gain: 11dB
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: CEL
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
- Power - Max: 125mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
- Frequency - Transition: 12GHz
- Gain: 8.5dB
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
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- Manufacturer: Fairchild Semiconductor
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Power - Max: 150mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
- Frequency - Transition: 850MHz
- Gain: 15dB ~ 23dB
- Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
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- Manufacturer: Microsemi Corporation
- Series: Military, MIL-PRF-19500/343
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 200°C (TJ)
- Package / Case: TO-72-3 Metal Can
- Supplier Device Package: TO-72
- Power - Max: 200mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 40mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
- Frequency - Transition: 500MHz
- Gain: 12.5dB ~ 21dB @ 450MHz
- Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Rochester Electronics, LLC
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3-1
- Power - Max: 250mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
- Frequency - Transition: 9GHz
- Gain: 21.5dB
- Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
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- Manufacturer: Infineon Technologies
- Mounting Type: Surface Mount
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
- Power - Max: 185mW
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 2.8V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
- Frequency - Transition: 65GHz
- Gain: 21.5dB
- Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
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- Manufacturer: Microsemi Corporation
- Mounting Type: Chassis Mount
- Operating Temperature: 200°C (TJ)
- Package / Case: 55AW
- Supplier Device Package: 55AW
- Power - Max: 500W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Frequency - Transition: 1.03GHz ~ 1.09GHz
- Gain: 9.5dB
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- Offers in stock:
- 10
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- 100